Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
64 (1993), S. 2993-2998
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A new polishing machine has been constructed for the fabrication of bonded-wafer silicon-on-insulator (bonded-wafer SOI) through a numerically controlled polishing technique. The polishing machine is equipped with 32 small-area tools which produce the variation of polishing pressure over a wafer surface. The tools do not rotate. Instead, the wafers being polished perform an oscillatory motion. A tool removal profile which was adequate for selectively polishing one place on a wafer without affecting its neighboring areas was obtained. As a result of its test operation, the initial thickness deviation of σ=380 nm of the top Si layer of a bonded-wafer SOI sample has been improved to σ=48 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1144345
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