ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and HeatedSubstrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray PhotoelectronSpectroscopy)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.473-474.123.pdf
