ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The epitaxial growth of SiC by a hot-wall CVD system using monomethylsilane (CH3SiH3)as a precursor is described. In the case of CH3SiH3 source only, an undoped homoepitaxial layershowed an n-type conduction around 1016-1017cm-3 on the Si face. To improve the quality ofepilayers, the simultaneous supply of CH3SiH3 and C3H8 was carried out. The pit density of grownlayers was reduced from 105 to 103cm-2, and a donor concentration as low as 1.6×1014cm-3 wasachieved. An attempt to increase of the growth rate was also investigated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.203.pdf