ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Cross-sectional transmission electron microscopy (TEM) was used to investigate theextended defects in 3C-SiC films deposited on atomically flat 4H-SiC mesas. The nominal layerthickness was 10 μm and was considerably larger than the critical thickness determined by either theMatthews and Blakeslee or People and Bean models. Threading dislocation densities determined byKOH etching are far below densities typical of relaxed heteroepitaxial layers, down to as low as104cm-2 densities found in 4H-SiC. Misfit dislocations with Burgers vectors of 〈11 2 0〉 wereobserved in planes parallel to the 3C/4H SiC interface. These defects were interpreted as due tonucleation of dislocation half loops at mesa edges and glide along the 3C/4H interface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.279.pdf