ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors areinvestigated by conductance and internal photoemission spectroscopy. The effect of N-implantationon the density of interface traps Dit is studied and a model is proposed, which consistently explainsthe observed results
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.991.pdf