ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
It is generally accepted that the Schottky barrier height (SBH) is affected by the initialband bending at the bare nGaN surface as well as by an additional contribution following metaldeposition. In this work the effect of processing used for device fabrication on the surface bandbending of bare c-plane nGaN was studied by surface potential electric force microscopy (SP-EFM).An increase of the initial upward band bending from 1.0 ± 0.1eV for the as-grown GaN to 1.9 ±0.1eV after RTA treatment in N2 ambient was observed. No significant dependence of band bendingon N2 or Ar as ambient gas during the RTA treatment was observed. The increase of the initialupward band bending was also confirmed by photoluminescence (PL) measurements. We suggestthat the RTA treatment causes a high density of surface states, possibly as a result of hightemperature reaction of ambient gas and remnant contamination
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1529.pdf