ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0),Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared bymagnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMSdepth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stabilityof these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electricalproperty measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ[removed info]-cm, areseen for Cu(W) film, which is lower than the other films. An evaluation of the leakage currentcharacteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates thatCu with dilute tungsten is more stable than the other films studied. These results further indicatethat the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pureCu films. Therefore, the film is suitable for the future barrierless metallization
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3497.pdf
