ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have beendeveloped using the AlInGaN material system. Rapid progress in material growth, devicefabrication and packaging enabled demonstration of deep-UV light-emitting devices with emissionfrom 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed forthe shorter wavelength devices, these materials border between having material properties likeconventional semiconductors and insulators, adding a degree of complexity to developing efficientlight emitting devices. This chapter provides a review of III-nitride based UV light emitting devicesincluding technical developments that allow for emission in the ultraviolet spectrum, and anoverview of their applications in optoelectronic systems
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.141.pdf
