ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this article, the correlation of surface morphological defects and barrier-heightinhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes(SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forwardcharacteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP,so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities areeliminated or improved after CMP. Therefore, leakage current induced by barrier-heightinhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots insidethe active areas exhibits double barriers before CMP. This excludes that carrots are a cause ofbarrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at lowbias and increases breakdown voltage due to the reduction of thermionic field emission andelimination of local enhanced electric fields
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.827.pdf
