ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. TheJBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacingguard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has aforward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2,which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBSdiodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a busvoltage up to 2.5kV was used to characterize the high power switching performance of SiC JBSdiodes. A large inductance load of 1mH was used to simulate the load of a high power AC inductionmotor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy lossby 30% and Si IGBT turn-on energy loss by 21% at room temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.947.pdf
