ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper presents silicon carbide sensor interface circuits and techniques for MEMSbasedsensors operating in harsh environments. More specifically, differential amplifiers wereconstructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passivecomponents. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidthof ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used toamplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Designconsiderations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing andfor frequency readout from a micromechanical resonator are also presented
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1083.pdf