ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports fabrication and electrical characterization of 6H-SiC n-channel,depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analogintegrated circuits for sensing and control in propulsion, power systems, and geothermal exploration.Electrical characteristics of the resulting JFET devices have been measured across the wafer as afunction of temperature, from room temperature to 450oC. The results indicate that the JFETs aresuitable for high-gain amplifiers in high-temperature sensor signal processing circuits
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1099.pdf