ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thermal stress, plastic slip deformation and accumulation of dislocations in shallowtrench isolation (STI) type ULSI devices when the temperature drops from 1000 し to roomtemperature are analyzed by a crystal plasticity analysis cord. The results show that dislocationaccumulation takes place at the temperature range over 800 し, and the difference of 6 MPa in thelattice friction stress at 1000 し!causes increase of dislocation density more than 1.6 times.Dislocations generate and accumulate at the shoulder part of the device area and bottom corners ofthe trench. Dislocations are categorized into two groups. In one group, dislocation lines aremostly straight and parallel to the trench direction, and in the other group, dislocations make halfloop type structure. Possibilities for the suppression of dislocation accumulation through controlof lattice friction stress at high temperature region are discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.1035.pdf
