ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
ZnO thin films were grown on single-crystal Si(100) substrate by pulsed laser deposition (PLD)technique. The crystal structure and electrical properties were investigated as a function of oxygen partialpressure. Results indicate that highly c-axis oriented ZnO films can be obtained at all oxygen pressurerange. With the increase of oxygen pressure, the crystallinity is further enhanced and the film presentssmooth, uniform and dense packed columnar microstructure. Hall measurement indicates the resistivityof ZnO films increases with oxygen pressure. ZnO film grown at optimum conditions is employed tofabricate the MSM structured UV detectors with Ti/Pt/Au interdigital electrode configuration by standardphotolithography and lift-off technique. The I-V characteristic and photo response measurement indicatea good ohmic contact between the ZnO film and electrode, and significant photoresponsivity underultraviolet illumination
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.577.pdf
