ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The degradation and recovery behavior of device performance on GaAlAs LEDs (Lightemitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reversecurrent increases after irradiation, while the capacitance decreases. The device performancedegradation is proportional with fluence. For electron irradiation, fluence rate is also effective fordegradation. Low fluence rate shows more large degradation compared to high fluence rateresulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate,and this spectrum increases with fluence. The radiation damage of proton is larger than that ofelectron irradiation, which is caused by the difference of mass and possibility of nuclear collisionfor the formation of lattice defects. After irradiation, the device performance recovers by thermalannealing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.119.pdf