Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 207-212
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Complexes formed by low dose irradiation with electron (1015-16/cm2) and He (5x1012-5x1013/cm2) in the relatively low carbon concentration (1016/cm3) MCZ silicon were investigated byhighly sensitive and quantitative IR absorption analysis. CiOi and VO were the main complexes inall cases. The concentration of these complexes was about 1015/cm3, or 10% of included carbon inthe highest case. Loss of almost equal amount of Cs was observed. The concentration of CiOiI wasone order of magnitude lower. Upon annealing, these lines weakened and almost disappeared at 400oC. There were some absorption lines introduced by the annealing. VO2 was strongest among themand CsOi related structure was also confirmed. There were absorption lines at 954.9 and 962.6 cm-1appeared after annealing at 300 oC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.207.pdf
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