ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The effect of hydrostatic argon pressure equal to 105 Pa and 1.1 GPa applied to processingat up to 1270 K (HT) of Si:Cr samples prepared by Cr+ implantation (dose 1x1015 cm-2, 200keV) into (001) oriented Czochralski silicon, has been investigated by Secondary Ion Mass Spectrometry,photoluminescence, X-ray and SQUID methods.Cr+ implantation at this energy and dosage produces amorphous silicon (a-Si) near the implantedions range. Solid phase epitaxial re-growth (SPER) of a-Si takes place at HT. The Cr profiledoes not depend markedly on HP applied during processing at 723 K. Si:Cr processed at up to 723K indicates magnetic ordering. Annealing under 105 Pa at 873 K, 1070 K and 1270 K results in amarked diffusion of Cr toward the sample surface. In the case of processing under 1.1 GPa this diffusionis less pronounced, SPER of a-Si is retarded and the a-Si/Si interface becomes enriched withCr. The Cr concentration in Si:Cr sample processed at 1270 K under 1.1 GPa forms two distinctmaxima, the deeper one at 0.35 μm depth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.375.pdf
