Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 535-540
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The generation of semiconductor nanowires (NWs) by a “bottom-up” approach is oftechnological interest for the development of new nanodevices. In most cases Si and SiGenanowires (NWs) are grown by molecular beam epitaxy (MBE) and by chemical vapor deposition(CVD) on the base of the vapor-liquid-solid-mechanism (VLS). In both cases small metal dropletsact as a seed for the NW formation. The article mainly refers to the specific features of the MBEgrowth. The application of metals related to the VLS growth concept (quite often gold droplets areused) also causes several disadvantages of this approach, e.g., the formation of a metal wetting layeron all surfaces, dislocations, and electric active point defects. Concerning the formation of devices,technological steps, such as oxidation and doping of NWs, have to be considered. Specifictechniques have to be applied to investigate the properties of individual semiconductor NWs. Someexamples shall illustrate this topic
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.535.pdf
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