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  • Articles: DFG German National Licenses  (4)
  • 1990-1994  (2)
  • 1985-1989  (2)
  • 1991  (2)
  • 1989  (2)
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  • Articles: DFG German National Licenses  (4)
Material
Years
  • 1990-1994  (2)
  • 1985-1989  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Two-laser resonance-enhanced photoionization spectrum of benzene (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3490-3497 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports results of an experiment involving two-laser resonance-enhanced photoionization of benzene. The excitation sources were two frequency-doubled dye lasers. The first laser pumped the molecule to a selected vibronic level of its first excited singlet state (1B2u), from where it was ionized by a time-delayed pulse of the second laser. The ion yield depends on the intermediate vibronic state as well as on the wavelength of the ionizing laser. From the structures and intensities of the measured ion spectra we derived vibrational frequencies and molecular parameters of the ground electronic state of the ion to a remarkable accuracy. The contributions of autoionizing Rydberg levels to the ionization cross section can clearly be distinguished from direct ionization. Several resonance peaks were assigned to transitions to vibrational modes within these Rydberg states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455859
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4066-4068 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at −10 V bias was measured for 250-μm-diam diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343334
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3159-3161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding, perhaps the most flexible is that which employs free-standing III–V films as created by epitaxial liftoff. For some purposes, weak Van der Waals forces provide an adequate bond between the native oxides of the III–V film and its new substrate. If the substrate is coated by palladium however, a low temperature solid-phase-topotaxial reaction occurs, producing oriented Pd4GaAs under the GaAs film. In effect, the topotaxy comes about through mechanical contact alone. The resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105771
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Cosmological implications of BL Lac objects (1991)
    Springer
    Astrophysics and space science 179 (1991), S. 321-329 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It has become clear in recent years that relativistic beaming is a good explanation for the BL Lac phenomenon. Of studies based on the relativistic beaming model of BL Lac objects, we note that the orientation of jet's axis to the line-of-sight is very small and, therefore, the observed flux emitted from a rapidly moving source is orders of magnitude higher than the flux in its rest-frame:F obs = δ3 + α F intr, where δ is the bulk relativistic Doppler factor. Then the observed apparent magnitudem v must be corrected for this effect. For our 39 samples, the corrected apparent magnitudem v corr and logZ have a good correlation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00646952
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    Paper (German National Licenses)
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