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  • Articles: DFG German National Licenses  (7)
  • 1990-1994  (7)
  • 1985-1989
  • 1993  (5)
  • 1991  (2)
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  • Articles: DFG German National Licenses  (7)
Material
Years
  • 1990-1994  (7)
  • 1985-1989
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Optical absorption spectrum of hydrogenated amorphous silicon using photo-pyroelectric spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1799-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficient α of doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured for photon energies from 2.2 to 1.0 eV using photo-pyroelectric spectroscopy (PPES). A simplified experimental setup and analysis for extracting α from the PPES data are described. In PPES the temperature rise induced in the a-Si:H thin film due to weakly absorbed light is detected via a pyroelectric polymer in thermal contact with the sample. This technique presently has a sensitivity of αd(approximately-greater-than)10−3, where d is the sample thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354784
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of heavily delta-doped GaAs grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 608-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-type and p-type delta-doped GaAs grown by molecular beam epitaxy with rather significantly high doses of Si and Be have been investigated by transmission electron microscopy (TEM). The amount of doses ranged from half a monolayer to two monolayers. The microscopic structures of the delta-doped regions and the adjacent epilayers were directly observed by TEM. The effect of impurity spreading on the heterointerfaces and superlattices was also studied. Si atoms present in Si delta-doped samples were confined to within a few atomic layers. The Be atoms present in Be delta-doped samples, however, spread over a quite wide region and caused rough heterointerfaces and wavy superlattices to form. Spreading of Be was attributed to segregation and diffusion which occurred during growth. Stacking faults were found in the delta-doped samples when they were grown at low temperatures. They could be attributed to local strain caused by heavy doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353370
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Monolithic integration of a light-emitting diode array and a silicon circuit using transfer processes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2760-2762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the attainment of a monolithically integrated light-emitting diode array on a silicon integrated circuit. The emitters are first formed epitaxially on a lattice-matched substrate and are subsequently transferred to the silicon. Interconnections are made using thin-film techniques between the 128 separately addressable light-emitting diodes and the driver circuit. This work demonstrates attainment of a high level of optoelectronic/logic integration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109252
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3159-3161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding, perhaps the most flexible is that which employs free-standing III–V films as created by epitaxial liftoff. For some purposes, weak Van der Waals forces provide an adequate bond between the native oxides of the III–V film and its new substrate. If the substrate is coated by palladium however, a low temperature solid-phase-topotaxial reaction occurs, producing oriented Pd4GaAs under the GaAs film. In effect, the topotaxy comes about through mechanical contact alone. The resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105771
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Cosmological implications of BL Lac objects (1991)
    Springer
    Astrophysics and space science 179 (1991), S. 321-329 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It has become clear in recent years that relativistic beaming is a good explanation for the BL Lac phenomenon. Of studies based on the relativistic beaming model of BL Lac objects, we note that the orientation of jet's axis to the line-of-sight is very small and, therefore, the observed flux emitted from a rapidly moving source is orders of magnitude higher than the flux in its rest-frame:F obs = δ3 + α F intr, where δ is the bulk relativistic Doppler factor. Then the observed apparent magnitudem v must be corrected for this effect. For our 39 samples, the corrected apparent magnitudem v corr and logZ have a good correlation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00646952
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    The electrical properties and d.c. degradation characteristics of silver doped ZnO varistors (1993)
    Springer
    Journal of materials science 28 (1993), S. 1391-1395 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract ZnO-Bi2O3-based ceramic varistors containing up to 2500 p.p.m. Ag2O were prepared by the mixed oxide route. The products were characterized in terms of current-voltage (I–V) behaviour, capacitance-voltage (C-V) behaviour and d.c. degradation behaviour. Additions of silver did not significantly affect ZnO grain growth or sintered density, but decreased the non-linearity exponent, a, and increased the breakdown voltage. Silver-doped specimens exhibited an unusual d.c. degradation behaviour, with the leakage current initially decreasing before reaching a stable value. For doping levels ≥ 500 p.p.m. Ag2O, the change in breakdown voltage was positive for both forward and reverse directions. Silver doping appeared to increase the Schottky barrier height under conditions of continuous d.c. stress and improve the degradation behaviour. The optimum levels of Ag2O addition were in the range 500–1000 p.p.m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01191983
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    An approach to fault diagnosis of chemical processes via neural networks (1993)
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 39 (1993), S. 82-88 
    Details
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: This article presents an approach to fault diagnosis of chemical processes at steadystate operation by using artificial neural networks. The conventional back-propagation network is enhanced by adding a number of functional units to the input layer. This technique considerably extends a network's capability for representing complex nonlinear relations and makes it possible to simultaneously diagnose multiple faults and their corresponding levels in a chemical process. A simulation study of a heptane-to-toluene process at steady-state operation shows successful results for the proposed approach.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/aic.690390109
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    Paper (German National Licenses)
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