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  • Articles: DFG German National Licenses  (60)
  • 1990-1994  (60)
  • 1994  (32)
  • 1993  (28)
Source
  • Articles: DFG German National Licenses  (60)
Material
Years
  • 1990-1994  (60)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1983-1985 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferro-antiferroelectric Li0.7Na0.3NbO3 solid solution crystal was grown from the melt by the Czochralski method. It has been found from the high temperature x-ray diffraction that the crystal is orthorhombic with a unit cell of dimensions a=5.374(9) A(ring), b=5.152(1) A(ring), and c=16.738(0) A(ring) at 25 °C, and undergoes a structural phase transition from orthorhombic to tetragonal at 480 °C. It was confirmed from the observation of the D-E hysteresis loop and the pyroelectric measurements that the mixed crystal Li0.7Na0.3NbO3 undergoes a first order ferroelectric phase transition at 480 °C. In the dielectric measurements, the dielectric behavior in the vicinity of the phase transition temperature reveals a diffusive character and also a pronounced dielectric dispersion due to an ionic hopping observed over the wide temperature range near 298 °C.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6124-6127 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of zinc blende-GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source. We postulate, based on optical emission spectroscopy studies of the remote plasma, that, in our study, nitrogen atoms are the species primarily responsible for efficient nitridation. The zinc blende nature of the GaN films was confirmed by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, and ex situ low-temperature photoluminescence analyses. Our zinc blende-GaN film growth rates (∼0.3 μm/h) are higher than those reported to date that involve the use of electron cyclotron resonance type reactive nitrogen sources.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2489-2495 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron trapping in microvoids was studied by positron-lifetime and positron Doppler line-shape measurements of centrifugally atomized 304 stainless-steel powder, which was hot-isostatically-press consolidated. This material contained a concentration of several times 1023/m3 of 1.5-nm-diam microvoids. Positron annihilation was strongly influenced by the microvoids in that a very long lifetime component τ3 of about 600 ps resulted. The intensity of the τ3 component decreased with decreasing number density of 1.5 nm microvoids. The Doppler peak shape was found to be much more strongly influenced by microvoids than by any other defects such as precipitates or grain boundaries. In particular microvoids produced significant narrowing of the Doppler distribution shape.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hypothesis of stabilization of turbulence by shear in the E×B drift speed successfully predicts the observed turbulence reduction and confinement improvement seen at the L (low)–H (high) transition; in addition, the observed levels of E×B shear significantly exceed the value theoretically required to stabilize turbulence. Furthermore, this same hypothesis is the best explanation to date for the further confinement improvement seen in the plasma core when the plasma goes from the H mode to the VH (very high) mode. Consequently, the most fundamental question for H-mode studies now is: How is the electric field Er formed? The radial force balance equation relates Er to the main ion pressure gradient ∇Pi, poloidal rotation vθi, and toroidal rotation vφi. In the plasma edge, observations show ∇Pi and vθi are the important terms at the L–H transition, with ∇Pi being the dominant, negative term throughout most of the H mode. In the plasma core, Er is primarily related to vφi. There is a clear temporal and spatial correlation between the change in E×B shear and the region of local confinement improvement when the plasma goes from the H mode to the VH mode. Direct manipulation of the vφi and E×B shear using the drag produced by a nonaxisymmetric magnetic perturbation has produced clear changes in local transport, consistent with the E×B shear stabilization hypothesis. The implications of these results for theories of the L–H and H–VH transitions will be discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 927-936 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear damping rates of the toroidal ion temperature gradient (ηi) mode due to the toroidal resonance are calculated in the local kinetic limit. The well-known Landau contour method is generalized to treat the analytic continuation problem of the guiding center dispersion function in the toroidal resonance system where the resonance occurs from both the magnetic ∇B-curvature drift and the parallel ion transit drift. A detailed numerical analysis is presented for the dependence of the damping rate of the toroidal ηi mode on various parameters such as εn, ky, and the trapped electron fraction. In addition, a consideration is presented on the decay problem of the ballistic response by phase mixing in the toroidal system, which is directly related to the kinetic damping problem of the normal modes by the toroidal resonance.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 928-931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on GaAs (100) substrates by atomic layer epitaxy modified from chemical-vapor deposition with thicknesses ranging from 600 to 6000 A(ring). X-ray-diffraction and micro-Raman scattering measurements were carried out to study the effects of strain in the ZnSe epilayers with different thicknesses. The increase in full width at half-maximum of double-crystal x-ray rocking curves was observed for layers thicker than the critical thickness, which indicates that the crystallinity gets strongly degraded when the layers are grown over the critical thickness. The critical thickness estimated by x-ray rocking curves is 1500 A(ring), while that obtained by micro-Raman scattering is 1000 A(ring). This difference suggests that the elastic strain depends on the layer depth for ZnSe epilayers around the critical thickness.
    Type of Medium: Electronic Resource
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