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  • Articles: DFG German National Licenses  (3)
  • 1995-1999  (3)
  • 1960-1964
  • 1995  (3)
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  • Articles: DFG German National Licenses  (3)
Material
Years
  • 1995-1999  (3)
  • 1960-1964
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1523-1530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study concerning the excitation mechanism of the Yb impurity in n- and p-type InP crystals was performed by the method of optically detected microwave-induced impact ionization. Based on the results it is argued that the Yb3+ core excitation is intermediated by a nonradiative recombination of a bound exciton. A fingerprint of the existence of such an excitonic state is given. Also, the nonradiative decay channel is discussed and shown to involve an Auger process with the energy transfer to a locally bound electron. Experimental evidence is presented that by the impact ionization of the bound electron the nonradiative recombination channel may be removed, leading to an increase of the characteristic Yb3+ luminescence. An unprecedented microwave-induced 5% increase of the Yb3+ intrashell emission has been recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2347-2349 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence excitation spectra are used to determine the order-dependent parameters: valence-band splitting and band-gap reduction in spontaneously ordered GaInP2. Effects due to composition fluctuations between different samples and the associated strain, as well as the excitonic binding energies, have been properly taken into account to yield accurate band-gap reduction and valence-band splitting values. The results from recently published ab initio band structure calculations are used to extrapolate the band-gap reduction from the strongest experimentally realized degree of ordering to perfect ordering. We find a total band-gap reduction of 471±12 meV, which is very close to recent theoretical predictions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1−xAs/InP single quantum well structures is experimentally verified by the determination of the effective in-plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k⋅p-perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov–de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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