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  • Articles: DFG German National Licenses  (14)
  • 2000-2004  (2)
  • 1990-1994  (7)
  • 1985-1989  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1720-1722 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroreflectance (ER) measurements have been performed on an (AlxGa1−x)1−zInzPyAs1−y pentanary alloy grown on (100) GaAs in the energy range 1.3–3.8 eV at 300 K. Accurate band-gap energy has been determined from ER measurements. Photoluminescence (PL) spectra have been measured in the energy range 1.3–2.0 eV at 300 and 77 K. From the broadening parameters in ER spectra and the full width of half-maxima in PL spectra, the quality of AlGaInPAs has been discussed. The other optical features, E0+Δ0, E1, E1+Δ1, and the spin-orbit splitting parameters Δ0 and Δ1 have been determined.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1027-1029 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-organic molecular-beam epitaxy growth of GaSb is investigated for the first time by using the new precursor trisdimethylaminoantimony (TDMASb) together with triethylgallium (TEGa). An etching effect is observed when TDMASb is supplied to the (001) GaSb surface without precracking. The etching rate is dependent on the substrate temperature and TDMASb flow rate, while independent of the TEGa flow rate. GaSb layers can be grown when the TDMASb is precracked in the gas cracker cell. The etching mechanism is discussed in connection with the decomposition process of TDMASb on the surface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 81-83 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of (GaP)m/(AlP)n superlattices (SLs), with m+n=14, grown on GaP(001) by gas source molecular beam epitaxy have been studied by photoluminescence (PL), electroreflectance (ER), and optical reflectance. The dependence of the PL peak energies and the relative intensity on the monolayer number of AlP is in agreement with those theoretically predicted for the case of type II band alignment of GaP/AlP SLs. The refractive index of GaP/AlP SLs has been studied for the first time and compared with that of an AlGaP alloy. The refractive index calculated for an AlGaP alloy using a single-effective-oscillator model is consistent with the experimentally obtained results.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 3 (1987), S. 897-904 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2148-2150 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion at the InP/TlInGaAs heterointerface was confirmed. The photoluminescence (PL) intensity for the DH was approximately ten times stronger than that of the single heterostructure. The PL peak energy and its variation with temperature for the TlInGaAs/InP DH decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2849-2851 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline GaN layers were grown on W, Mo, Ta, and Nb metal substrates by gas-source molecular-beam epitaxy using an ion-removal, electron-cyclotron-resonance radical cell. X-ray diffraction rocking curves showed preferential GaN(0002) or GaN(10–11) orientations. The grain sizes ranged from 100 to 800 nm. Strong photoluminescence (PL) emission without yellow luminescence was observed from these polycrystalline GaN layers. At 77 K, PL peaks at 3.46 and 3.26 eV were observed, and their temperature dependence fit a simple relation based on the number of phonons. The higher-energy peak probably was due to the free excitonic transition in hexagonal GaN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract By utilizing the characteristics of amorphous alloys capable of possessing specific electrocatalytic activity and corrosion resistance by alloying and surface activation treatment, an attempt was made to find amorphous alloys which are active as the anode material for production of sodium hypochlorite by electrolysis of seawater. Amorphous Ni-Nb and Ni-Ta alloys containing only 0.5–2.0 at % palladium and other platinum group metals showed a very high activity for chlorine production by electrolysis of 0.5M NaCl at 30°C when they were previously immersed in 46% HF for surface activation. The current efficiency of these surface-activated alloys for chlorine evolution considerably exceeded that of the currently used, most active Pt-Ir/Ti electrode for electrolysis of seawater. The surface activation treatment resulted in preferential dissolution of alloy constituents unnecessary for the electrocatalytic activity, i.e. nickel and valve metals, with a consequent enrichment of electrocatalytically active platinum group elements in the surface-activated layer. The corrosion weight loss of the surface-activated amorphous alloys under the steady state conditions for chlorine production was undetectable by a microbalance.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 16 (1986), S. 565-574 
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The anodic characteristics of a variety of amorphous palladium-base alloys were examined with a view to their use for the production of sodium hypochlorite by electrolysis of dilute sodium chloride solutions at ambient temperature. The corrosion resistance of palladium-metalloid alloys was obtained by alloying with platinum group metals and/or valve metals. Among these alloys, rhodium-containing alloys showed high electrocatalytic activities for chlorine evolution. Surface activation treatment was, however, necessary to obtain sufficiently high activities for chlorine evolution at low overpotentials. Surface-activated amorphous alloys possessed considerably higher current efficiency for chlorine evolution in comparison with currently used anodes.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Powder catalysts were prepared by immersion of amorphous Ni-40Zr and Ni-40Ti alloys containing a few at % of platinum group elements in HF solution. This treatment led to preferential dissolution of the valve metal and nickel with a consequent formation of microcrystalline alloy powders consisting of concentrated platinum group elements and some nickel and valve metal. Porous gas-diffusion electrodes prepared by using these alloy catalyst powders were employed for electrochemical reduction of oxygen and oxidation of hydrogen in 1 M H2SO4 at 25°C. The activity of the electrodes prepared from the amorphous alloys containing Pt−Ru, Pt−Rh, Pt and Pd for oxygen reduction was considerably higher than that of the platinum black electrode. Oxidation of hydrogen occurred readily close to the equilibrium potential. Amorphous alloy electrodes containing Pt−Ru, Pt−Rh and Pt were more active than the platinum black electrode for the hydrogen oxidation.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 269 (1991), S. 1039-1044 
    ISSN: 1435-1536
    Keywords: Dielectric analysis ; single-shell model ; permittivity ; dielectric mixture equation ; erythrocyte ghost
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The purpose of this study is to confirm the applicability of dielectric mixture equations in dielectric analysis of biological cell suspensions. Two dielectric mixture equations, the Pauly-Schwan (P-S) equation and the Hanai-Asami-Koizumi (H-A-K) equation were tested using sheep erythrocyte ghosts whose internal solution is identical with the external solution. Dielectric measurements were carried out for the ghost suspensions over a frequency range 10 kHz to 100 MHz; a single dielectric relaxation was found between 100 kHz and 10 MHz. From the dielectric relaxation, the conductivity and permittivity of the ghost interior and the capacitance of the cell membrane were calculated following the P-S and H-A-K equations. When the H-A-K equation was employed (and as expected from the property of the ghosts), the estimated internal conductivity was in good agreement with the external conductivity at volume fractions up to about 0.7. With the P-S equation, on the other hand, the same results as above were obtained but only at low volume fractions below about 0.3. In addition, the H-A-K equation provided a better simulation for the observed relaxation curves than did the P-S equation, especially at high volume fractions. It is, therefore, concluded that the H-A-K equation is applicable to a wider range of volume fraction than is the P-S equation.
    Type of Medium: Electronic Resource
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