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  • 1
    Electronic Resource
    Electronic Resource
    A simple system of thermal control and frequency stabilization of solitary diode lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3648-3652 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A temperature controller using the photodiode of a free-running laser as a heater element is described. Its use can improve substantially the stabilization on a spectroscopic line and avoids the need of sink temperature controller at the millidegrees kelvin level. The long term stability of the system has been tested in performing a detailed study of the splitting of the dark lines in rubidium vapors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310351
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  • 2
    Electronic Resource
    Electronic Resource
    Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 955-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]||GaN[112¯0]||Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371966
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  • 3
    Electronic Resource
    Electronic Resource
    Study of domain stability on (Pb0.76Ca0.24)TiO3 thin films using piezoresponse microscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 715-717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a method to investigate the domain stability issue based on piezoresponse microscopy. The switching and back-switching processes of sol–gel derived (Pb0.76Ca0.24)TiO3 thin films were investigated by comparing the local piezoelectric hysteresis loops in continuous mode and pulse mode. It was found that the local hysteresis loops acquired by the pulse mode in shorter pulse width were dominated by the back-switching process while the continuous mode piezoelectric hysteresis loop provides information on the domain switching process. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494122
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  • 4
    Electronic Resource
    Electronic Resource
    Dispersion, refinement, and manipulation of single silicon nanowires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully dispersed silicon nanowires in liquid by a mild etching treatment. A transmission electron microscopic study reveals that the etching occurs selectively at the defect sites of the wires. This implies that the treated wires have much fewer defects than those of the raw material. We have adopted an electrophoresis method, which is usually used in biosciences, to mount single nanowires onto chosen electrodes of a prototype device. The mounting of the wires was checked using scanning probe microscopes. Compared with the commonly used microactuation method, our method is far more applicable to industrial device fabrication, which may require simultaneous manipulation of a large number of wires. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456966
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of highly ordered metallic nanowire arrays by electrodeposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1039-1041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly ordered hexagonal arrays of parallel metallic nanowires (Ni, Bi) with diameters of about 50 nm and lengths up to 50 μm were synthesized by electrodeposition. Hexagonal-close-packed nanochannel anodized aluminum oxide film was used as the deposition template. The deposition was performed in an organic bath of dimethylsulfoxide with metal chloride as the electrolyte. A high degree of ordering and uniformity in these arrays can be obtained with this technique by fine-tuning the electrodeposition parameters. Moreover, an unprecedentedly high level of uniformity and control of the wire length was achieved. The arrays are unique platforms for explorations of collective behavior in coupled mesoscopic systems, and are useful for applications in high-density data storage, field emission displays, and sensors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389765
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  • 6
    Electronic Resource
    Electronic Resource
    Dynamics of GaAs/AlGaAs microdisk lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic response of a GaAs/AlGaAs microdisk laser has been experimentally investigated using femtosecond optical pumping. Below the lasing threshold, the delay time of the emission pulse from the microdisk hardly changes with the pump power. Above the lasing threshold, the delay time is shortened dramatically, and it decreases with increasing the pump power. The theoretical simulation based on the rate equations reproduces the experimental observation after the effect of carrier diffusion is taken into account. The simulation result illustrates that the speed of a microdisk laser is limited mainly by the carrier diffusion in the disk plane. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317544
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  • 7
    Electronic Resource
    Electronic Resource
    Microlaser made of disordered media (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2997-2999 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated microlasers with disordered semiconductor nanoparticles. The physical mechanism of optical confinement is based on Anderson localization of light in micrometer-sized random media. Pulsed lasing occurs around 380 nm at room temperature under optical pumping. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126557
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  • 8
    Electronic Resource
    Electronic Resource
    Optically pumped InAs quantum dot microdisk lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3519-3521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved lasing in InAs quantum dot embedded GaAs microdisks under optical pumping. Above the lasing threshold, a drastic increase of emission intensity is accompanied by a decrease of the spectral linewidth of the whispering gallery modes. The laser light is linearly polarized. The polarization direction is parallel to the disk plane. The wide gain spectrum of quantum dots allows simultaneous lasing in several whispering gallery modes of a microdisk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126693
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  • 9
    Electronic Resource
    Electronic Resource
    Probing local leakage current and ferroelectricity of Pb(Zr0.53, Ti0.47)O3/YBa2Cu3O7−x heterostructure by a modified atomic force microscope (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1923-1925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present an investigation on probing leakage current and ferroelectricity of Pb(Zr, Ti)O3(PZT)/YBa2Cu3Ox heterostructure using a modified atomic force microscopy. Inhomogeneities of leakage current and ferroelectric properties were concurrently mapped and quantitatively studied on a nanometer scale. It shows that microscopically the leakage current can be described by a model based on space-charge-limited current. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126213
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3397-3399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamical response of InAs/GaAs quantum-dot microdisk lasers has been experimentally investigated using femtosecond optical pumping. Because surface recombination and carrier diffusion are suppressed in the quantum dots, the response speed of a quantum-dot microdisk laser is much faster than that of a quantum-well microdisk laser. A turn-on time as short as 7.8 ps has been achieved in a quantum-dot microdisk laser at 5 K. The temperature dependence of the dynamical response of the quantum-dot microdisk lasers has also been studied over a wide temperature range. At the same pumping level, the turn-on time of the laser decreases as the temperature increases from 5 to 120 K. Such behavior may be due to a faster carrier relaxation process at higher temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376437
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