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  • Articles: DFG German National Licenses  (79)
  • 1995-1999  (71)
  • 1985-1989  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Giant magnetoresistive memory effect in Nd0.7Sr0.3MnOz (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5165-5165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of a magnetic field (B). Here we reported that the conductivity of the films depends not only on the applied field but also on the magnetic history. At T well below the temperature Tp where the zero-field resistivity has a peak, the film enters a high conductivity state [(ΔR/RB)(approximately-greater-than)103] upon application of a magnetic field which persists even when B is reduced to zero. The original "zero'' field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. That is, while the remanent magnetization is small the remanent magnetic resistivity is 10−3 times the initial zero-field-cooled resistivity. A possible explanation based on a two-component model of semiconducting matrix with embedded shunting paths of ferromagnetic material will be presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361542
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1792-1794 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102320
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and superconducting properties of ultrathin YBa2Cu3O7−x films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2367-2369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films of YBa2Cu3O7−x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed temperature-activated conductivity and only partial transitions to superconductivity due to inhomogeneities in the film morphology. On MgO, the critical film thickness leading to deteriorations of the transport properties was 6 nm. An analysis of the fluctuation-enhanced conductivity near Tc in terms of the Aslamazov–Larkin theory [Phys. Lett. A 26, 238 (1968)] revealed three-dimensional behavior even in the thinnest fully superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101530
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  • 4
    Electronic Resource
    Electronic Resource
    Linear analysis of electromigration-induced void instability in Al-based interconnects (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 754-759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Void shape changes induced by electromigration pose reliability problems in Al-based interconnects. Recent observations have shown that a rounded void sometimes collapses to a transverse slit in an interconnect with bamboo-like grain structure. This article provides a linear stability analysis for a circular void that is only partially conductive in an otherwise infinite conductive medium. The relation between the inner conductivity (i.e., the conductivity of the medium in the void) and the critical remote electric field intensity, Ecr, for the linear stability of the void is established. It is proven that when the inner conductivity becomes zero, Ecr goes to infinity, and we can look upon the inner conductivity of a vacuum void as zero. That is why the vacuum circular void is linearly stable. It is also shown that when the inner conductivity is very small, the stability of a void is sensitive to it. From the computational results, we know that if the inner conductivity is 0.1% of that outside the void, the Ecr is only twenty times of that for the dislocation loop case. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366748
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  • 5
    Electronic Resource
    Electronic Resource
    Growth characterization of YBa2Cu3O7−x thin films on (100) MgO (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 310-312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth features of YBa2Cu3O7−x thin films on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that epitaxial growth (c-axis oriented) is achieved despite a large lattice mismatch of about 9% between the film and the substrate. Detailed studies of the energy dependence of the dechanneling yield at the film-substrate interface for films of different thickness reveal the presence of dislocations probably formed by strain relief in the initial state of growth. Stacking faults appear as the main defect structure in the bulk of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102413
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  • 6
    Electronic Resource
    Electronic Resource
    Multilayer optics for harmonic control of angiography beamline sources : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3357-3357 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In recent work, multilayers with band-tailored optics for dual energy digital subtraction angiography (DDSA) applications have been designed and tested at SSRL. Control of various multilayer parameters, including period grading, ratio of high-to-low Z material thickness, number of layers, etc., was used to produce reflectors with bandwidths ranging from 0.6%–10% and efficiencies in the 30%–95% range. In this paper, we consider the control of multilayer bandshapes and the implementation of double-reflection multilayer configurations to further control the first harmonic (33 keV) bandwidth and to suppress or eliminate the 66 keV and 99 keV harmonics present on angiography beamlines driven by wiggler or micropole undulator sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147465
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  • 7
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in epitaxial Nd0.7Sr0.3MnO3−δ thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1427-1429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance of epitaxial Nd0.7Sr0.3MnOδ thin films has been studied. A giant magnetoresistance, with more than 4 orders of magnitude change in resistance (−ΔR/RH(approximately-greater-than)106%), was obtained at ∼60 K and a magnetic field of 8 T. This giant magnetoresistance (GMR) ratio is about one order of magnitude larger than the highest value reported previously which was observed in La–Ca–Mn–O film. We have also obtained a large GMR ratio with −ΔR/RH(approximately-greater-than)3000% for H=5 T in an in situ Nd0.7Sr0.3MnOδ thin film, a much larger effect than the previous results in doped manganese oxide films in which a large GMR ratio was obtained only in postannealed samples. Our results also show that the GMR effect in these films can be strongly influenced by the thin-film preparation conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113267
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  • 8
    Electronic Resource
    Electronic Resource
    Growth morphology and characteristic structure in nanocrystalline Si film of high conductivity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of hydrogenated nanocrystalline Si film with high electronic conductivity is investigated by means of transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Nearly parallel columnar structures with growth orientation along the [110] zone axis of Si are found from cross-sectional TEM images of the film. HRTEM observation reveals that these columns are composed of nanocrystallites (3–6 nm size) and dendritelike growth morphology, while in the region between columns the texture consists of smaller sized (〈3 nm) grains embedded in a hydrogenated amorphous Si. The volume fraction of the crystalline component is about 58% measured by Raman spectroscopy. The conductivity of the film is very high, about 10−1 (Ω cm)−1. It is considered that this is directly related to the characteristic structure of the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113613
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  • 9
    Electronic Resource
    Electronic Resource
    Very low level residual resistivity in silver-sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1827-1829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of voltage–current (E–J) characteristics have revealed a distinct low level resistive tail for silver-sheathed (Bi,Pb)2Sr2Ca2Cu3O10 superconducting tapes. The residual tail is observed at very low voltage (E≤10−8–10−7 V/cm) of the E–J curves and can be described by E∝(J−Jc')n, where Jc' is a field and temperature dependent critical current and n=1.0–1.2. The dynamic resistivity is, typically, in the range of 10−13 Ω cm, but could be as high as 10−11 Ω cm in some specimens. This residual resistance can be induced by a severe thermal cycling treatment, although it may also be intrinsic, i.e., as-grown, to some of the specimens. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113335
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of preparation on resistivity behavior of epitaxial Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1689-1691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of sample preparation on the resistivity and magnetoresistance (MR) behavior of doped manganese oxides has been studied. Two systems, Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ thin films, have been chosen for this study. The former has the largest reported MR ratio at 60 K and the latter has a large MR ratio at room temperature. Two processes, deposition at a high temperature and annealing at a high temperature, have opposite influences on the resistivity behavior of these films. The results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113894
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