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  • Articles: DFG German National Licenses  (2)
  • 1995-1999  (2)
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  • Articles: DFG German National Licenses  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121933
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1373-1375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119898
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    Paper (German National Licenses)
    Fulltext
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