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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 36 (1971), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: SUMMARY A comparative analysis of the basic volatile aroma constituents of roasted peanuts representing standard varieties, different fertilization treatments, times of planting and harvesting and different storage conditions was conducted. An improved vacuum degassing method was used to remove the volatiles from the oil. Sixteen major peaks and three minor peaks consistently appeared on the gas chromatograms from all samples. Three compounds (pyridine, pyrazine and a compound with a molecular weight of 93) not previously identified were found among the minor peaks and were identified on the basis of gas chromatograph-mass spectrometric data. Aroma differences between peanut varieties were found to be quantitative. In peanut samples fertilized with boron, 1,2-dichloroethane was detected and the relative concentrations of three of the peaks were lower than those of samples fertilized with added boron. Although the length of growing time produced a slight effect on the relative volatile concentrations, no significant differences were found for peanuts harvested at different dates after 120 days from planting. Peanuts stored in a mixture of SO2 and N2 exhibited an off-flavor and the relative volatile concentrations and seed appearance were different from those peanuts stored in either N2, CO2 or dry air alone. The methods of quantitative estimation of the volatiles are discussed.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor–acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I2) transition in undoped GaN increases with temperature as T1.5. However, the I2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 641-643 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3224-3226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Chromatography A 137 (1977), S. 461-464 
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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