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  • 1
    Electronic Resource
    Electronic Resource
    Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360806
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial reactions in the SiO2/Ru and SiO2/Ru/Al-Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5751-5762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions in the structures of Si/SiO2 (500 nm)/Ru (65 nm) (up to 950 °C) and Si/SiO2 (500 nm)/Ru (72 nm)/Al-0.8 wt % Si (630 nm) (up to 700 °C), were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffractometry, selected-area electron diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, and transmission electron microscopy. A thin film of Ru was stable on a SiO2 substrate up to 30 min in a vacuum anneal at 950 °C. In vacuum, a fast interfacial reaction between the Ru thin film and the Al-Si overlayer started between 550 and 575 °C, resulting in the formation of a Si/SiO2/ RuAl2/(Ru4Al13)Al-Si layer sequence. Similar to the reactions between Pt group metals and Al, the Ru/Al reaction is nonuniform. It is controlled by a nucleation mechanism and is accompanied by void formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359220
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of Ag/Al bilayer self-encapsulation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5407-5412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-encapsulation kinetics of Ag/Al bilayers were studied both experimentally and theoretically as part of the effort to introduce Ag as an alternative metallization scheme for future ultra-large-scale-integrated technologies. Theoretical modeling was based on an analytical solution of a modified diffusion equation, which incorporated the diffusion of Al atoms through the Ag layers during the Ag/Al bilayer encapsulation progress. The amount of segregated Al atoms was monitored by both Rutherford backscattering spectrometry and film resistivity measurements, and correlated well with the theoretical predictions. These findings showed that the kinetics of the self-encapsulation could be significantly affected by both (i) the chemical affinity between Al and Ag atoms, and (ii) the interfacial energy between the metal layer (Ag) and the newly formed AlxOyNz diffusion barriers. Higher anneal temperatures were shown to accelerate the encapsulation process, and hence, achieved a lower resistivity in the underneath Ag layer. This model, in addition, confirmed the self-passivating characteristics of AlxOyNz diffusion barriers formed by Ag/Al bilayers annealed between 500 and 725 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371538
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  • 4
    Electronic Resource
    Electronic Resource
    Thickness profiles of SiO2 films deposited from tetraethoxysilane/O3 precursors in ultra-high-aspect-ratio capillaries (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3286-3288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness profiles of silicon dioxide films deposited by ozone-augmented tetraethoxysilane have been experimentally measured in ultra-high-aspect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual decrease in thickness along the capillary. A feature-scale model for this process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-forming reaction, thus producing the characteristic film profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115222
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  • 5
    Electronic Resource
    Electronic Resource
    Band gap of Ge rich Si1−x−yGexCy alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy films ( x≈0.90, y≤0.02) were grown by molecular beam epitaxy on Si substrates. Infrared optical absorption was used to obtain the band gap energy at room temperature. Biaxial strain obtained from x-ray diffraction measurements verified the presence of nearly relaxed films, and the total and substitutional C contents were obtained from channeling C-resonance backscattering spectrometry. We show by direct measurements that interstitial C had a negligible impact on the band gap, but substitutional C was found to increase the band gap with respect to equivalently strained Si1−xGex alloys. While strain decreases the band gap, the effect of substitutional C on the band gap depends on the Si and Ge fractions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117738
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first study of interfacial reactions of a metal with Si1−x−yGexCy epitaxially grown on Si. The Ti/Si1−x−yGexCy/Si (0〈y〈1.7%) contact system was studied after isochronal heat treatments from 500 to 800 °C. The results for Ti/Si1−xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide–germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide–germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide–germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118120
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  • 7
    Electronic Resource
    Electronic Resource
    Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si1−x−yGexCy films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1634-1636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic SiGeC films have been grown on (100) Si by atmospheric pressure chemical vapor deposition at 600 and 700 °C using SiH2Cl2, GeH4, and C2H4 precursors. Films with C concentrations of up to 2.5 at. % were entirely pseudomorphic and a 120-nm-thick Si66.5Ge31C2.5 film had 90% substitutional carbon. With increasing C incorporation due to increased ethylene flow, a layered structure was formed consisting of an amorphous film overlaying a buried pseudomorphic film. The crystalline-to-amorphous transition was initiated by the accumulation of C on the epitaxial growth surface. This deteriorated surface resulted in the formation of stacking faults along {111} planes and subsequent amorphization. Defect formation and amorphization could be prevented by periodically growing a thin Si epilayer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120001
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  • 8
    Electronic Resource
    Electronic Resource
    Wet oxidation of amorphous and crystalline Si1−x−yGexCy alloys grown on (100)Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of amorphous Si0.65Ge0.27C0.08 and single-crystal Si0.63Ge0.36C0.01 in wet ambient at 700 and 900 °C has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of carbon on the oxidation behavior. The low C content alloy behaved similar to the SiGe alloy: uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, carbon was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.65Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of nanocrystals (∼5 nm diam). The oxidation/annealing treatment has thus provided a useful mechanism for increasing the relative Ge concentration in the SiGeC alloy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113180
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  • 9
    Electronic Resource
    Electronic Resource
    Natural Course of Acute Pancreatitis (1997)
    Springer
    World journal of surgery 21 (1997), S. 130-135 
    Details
    ISSN: 1432-2323
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Acute pancreatitis comprises, in terms of clinical, pathologic, biochemical, and bacteriologic data, four entities. Interstitial edematous pancreatitis and necrotizing pancreatitis are the most frequent clinical manifestations; pancreatic pseudocyst and pancreatic abscess are late complications after necrotizing pancreatitis, developing after 3 to 5 weeks. Determinants of the natural course of acute pancreatitis are pancreatic parenchymal necrosis, extrapancreatic retroperitoneal fatty tissue necrosis, biologically active compounds in pancreatic ascites, and infection of necrosis. Early in the course of acute pancreatitis multiple organ failure is the consequence of various inflammatory mediators that are released from the inflammatory process and from activated leukocytes attracted by pancreatic injury. During the late course, starting the second week, local and systemic septic complications are dominant. Around 80% of deaths in acute pancreatitis are caused by septic complications. The infection of pancreatic necrosis occurs in 8% to 12% of acute pancreatitis and in 30% to 40% of patients with necrotizing pancreatitis. Bacteriologic analysis of intraoperative smears and aspirates reveals predominantly gram-negative germs deriving from the intestine, most frequently Escherichia coli . It has been confirmed that after necrotizing pancreatitis a considerable large group of patients suffer long-lasting exocrine and endocrine insufficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002689900204
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  • 10
    Electronic Resource
    Electronic Resource
    Topographic anatomic aspects of laparoscopic hernia repair (1996)
    Springer
    Der Chirurg 67 (1996), S. 807-813 
    Details
    ISSN: 1433-0385
    Keywords: Key words: Inguinal hernia ; Laparoscopic hernioplasty ; Topographic anatomy ; Schlüsselwörter: Leistenhernie ; laparoskopische Hernioplastik ; topographische Anatomie ; Leiste
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung. In der Diskussion über Sinn und Unsinn einer laparoskopischen Leistenbruchversorgung wird immer wieder die Gefährdung wichtiger anatomischer Strukturen durch den extraperitonealen oder transabdominellen präperitonealen Zugang angeführt. Anhand von eigenen anatomischen Präparationen an acht Leichen des Anatomischen Institutes der Universität Ulm wird auf die topographische Anatomie der Leistenregion und seiner wichtigen Strukturen hingewiesen. Unsere Erkenntnisse werden zu einer Metaanalyse der bisher publizierten Komplikationen dieser neuen Technik der Leistenbruchversorgung in Bezug gesetzt. Unter genügender Berücksichtigung der topographischen Anatomie kann die Komplikationsrate der laparoskopischen Leistenbruchversorgung weiter deutlich gesenkt werden.
    Notes: Summary. Accidental injury of important anatomic structures is a factor frequently mentioned in the discussion of the sense of laparoscopic hernia repair via the transabdominal or extraperitoneal approach. We describe the topographic anatomy of the inguinal region and point out important structures in this area as found in our anatomic preparations of eight specimens at the Department of Anatomy of the University of Ulm. These observations are correlated with a meta-analysis of published data on complications of this new technique for inguinal hernia repair. It is concluded that complications of laparoscopic inguinal hernia repair can be avoided if the topographic anatomy of the inguinal region is sufficiently taken into consideration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00002522
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