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  • Articles: DFG German National Licenses  (8)
  • 1990-1994  (2)
  • 1975-1979  (6)
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  • Articles: DFG German National Licenses  (8)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a means of constructing simplified quaternary phase diagrams based on a thermodynamic approach using known and estimated data for Gibbs free energy of formation. Isothermal, isobaric sections of the condensed phase diagrams are built up as tie lines, tie planes, and tie tetrahedra (representing two-, three-, and four-phase equilibrium, respectively) in a regular tetrahedron. This extends the now well-established methodology for ternary systems described, for instance, by Beyers [J. Appl. Phys. 56, 147 (1984); Mat. Res. Soc. Symp. Proc. 47, 143 (1985)]. The procedure is illustrated by reference to Ti-Si-N-O, Al-Si-N-O, Ti-Al-Si-N and Ti-Al-Si-O, systems which are relevant to interactions occurring at various interfaces during the formation of contacts in integrated circuits. These phase diagrams are then used to predict the stability of—or reactions in—metallization layers and thin-film systems involving four elements. In addition, a method is suggested to estimate unknown free energies of formation from observations of thin-film reactions and stability.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 48 (1976), S. 699-708 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 49 (1977), S. 927-931 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6265-6268 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin α-Co layer with an amorphous Si underlayer has been sputter deposited onto a thermal SiO2 substrate, rapid thermal annealed in N2 at 700–1050 °C, and the phases formed examined using Auger electron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A CoSix film results where x is constant with depth and determined by the relative amounts of Co and Si deposited. With increasing x, phases identified are α- and β-Co containing dissolved Si, Co2Si, CoSi, and CoSi2. At high temperatures, the CoSi2 film agglomerates and thins the underlying oxide probably on account of excess Si in the silicide film. Furthermore, in an N2 atmosphere, the CoSi2 globules are converted into CoSi in accordance with the phase diagram.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Microchimica acta 70 (1978), S. 31-50 
    ISSN: 1436-5073
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung Eine Methode zur semiquantitativen SIMS-Analyse, die im Gegensatz zu den aus der Literatur bekannten Verfahren nur einen Anpassungsparameter benötigt, wurde mit gutem Erfolg an Metall- und Mineralstandards getestet. Werte des Anpassungsparameters für verschiedene Matrices wurden angegeben und Aussichten für eine Weiterentwicklung dieser Methode in Richtung auf standardfreie Analysen wurden besprochen. Die analytische Richtigkeit für einige Elemente wurde mit Hilfe von matrixunabhängigen Fehlerfaktoren abgeschätzt.
    Notes: Summary A procedure for SIMS semiquantitative analysis, based on the use of one fitting-parameter, has been applied to metal and mineral standards with satisfactory results. Values of this parameter for various matrices are given, and prospects for analyses involving no reference elements are discussed. Analytical accuracies obtainable for individual elements are assessed in terms of matrix-independent error factors.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A passive layer, of several thousand Å thickness, formed on a polycrystalline nickel electrode, has been examined using secondary ion mass spectrometry (SIMS) by spottering with a 5.5 keV, 13μA·cm−2,40Ar+ primary beam. Concentration profiles were detived by monitoring the intensities of atomic and molecular mass peaks as a function of sputtering time (i.e. depth). Nickel was present throughout the layer but not as the element since the relative intensities of the Ni n + (n=1, 2, 3, 4) peaks, constituting part of its fingerprint spectrum, differed from those in the fingerprint spectrum of elemental nickel. These values were eventually reached, signifying piercing of the layer and thus providing a means of estimating its thickness. Imaging of58Ni+ showed the presence of nickel in at least two different modifications in the layer, both with higher Ni+ yields than the bulk nickel. Their fractional coverages were estimated from the images taken at various depths. The resulting profile of the Ni+ originating from one of these modifications was found to be proportional to the16O− profile, indicating that these ions originate from the same molecule. This example demonstrates the advantage of combining different SIMS modes (viz. depth profiles, fingerprint spectra and imaging) in tackling certain analytical problems.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 283-286 
    ISSN: 1432-0630
    Keywords: 07 ; 61.80 ; 68.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid and reliable SIMS profiling of insulators can be achieved by using negative primary ions and a diaphragm placed on the specimen for charge compensation. Results with garnet LPE layers demonstrate the compositional variations arising from non-steady state growth conditions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 11 (1976), S. 193-195 
    ISSN: 1432-0630
    Keywords: 07
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Changes in molecular secondary ion intensities brought about by working in an environment of oxygen can be rationalised in simple statistical terms.
    Type of Medium: Electronic Resource
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