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  • 1
    Electronic Resource
    Electronic Resource
    The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4773-4780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of nonalloyed epitaxial Au-Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0.28 Ω mm and ∼7×10−6 Ω cm2, respectively. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by secondary ion mass spectroscopy (SIMS) imaging and Auger depth profiling. Back side SIMS profiles indicate deep Ge and Au diffusion into the GaAs substrate in the island regions. Ohmic contact behavior was found to depend upon both the kinetics of the reactions (localized reactions and island growth) and the thermodynamics (substantial diffusion of both Au and Ge) of the system. A model describing the coupled Au and Ge in-diffusion with respect to the GaAs substrate is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352089
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  • 2
    Electronic Resource
    Electronic Resource
    Shallow ohmic contact to both n- and p-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 754-756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A shallow Pd/Ge/Ti/Pt/ohmic contact for both n- and p-GaAs has been investigated. The contacts were rapid thermally annealed in N2 for 15 s at temperatures from 350 to 550 °C. The lowest average specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω cm2 for the n- and p-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018 cm−3 and the p-GaAs was doped with carbon to 5×1019 cm−3. Electrical measurements and Auger depth profiles showed that the contacts were stable as they remained ohmic after an anneal at 300 °C for 20 h for both n- and p-GaAs. The p contact is more stable than the n contact at the higher temperatures where there is more As outdiffusion as determined by Auger depth profiles. Transmission electron microscopy showed that the interfaces between the p-GaAs and the contacts were smooth for both as-grown and annealed samples, and no oxides were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355248
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  • 3
    Electronic Resource
    Electronic Resource
    Recombination of Xe+ with F− ions in ambient helium (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4868-4873 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate coefficients for the ion–ion recombination process Xe++F−+He→XeF*+He have been determined in ambient helium gas in the density range from 0.2 to 0.7 NL (Loschmidt's number NL=2.687×1019 cm−3). The experimental methods consisted of observing the conductivity decay during the afterglow of a photoionized plasma, in conjunction with mass spectrometry of plasma ions and optical spectroscopy of the XeF* excimer radiation. The measured rate coefficients agree well with theoretical results by Bates and Mendaš and Monte Carlo simulations by Morgan et al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458676
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of annealing conditions on heavily carbon-doped InGaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2578-2580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps in H2 containing 0.3% AsH3 over the temperature range 5000–800 °C. Hall effect, secondary ion mass spectroscopy, double crystal x-ray diffraction, and integrated photoluminescence measurements showed that H outdiffuses over the annealing temperature range when the films were capped with silicon nitride. However, there was almost no net H outdiffusion for uncapped samples annealed in the same ambient and temperature range. Recombination centers formed during high temperature anneals in samples with less In (1%), but did not appear to form as readily in the one with more In (8%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109302
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  • 5
    Electronic Resource
    Electronic Resource
    Annealing effects on heavily carbon-doped GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 87-89 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as-grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 °C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 °C, but the hole concentration and lattice mismatch were still larger than those of the as-grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross-sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107622
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of ion pairing of a potassium salt in nonaqueous liquid and polymer electrolytes: X-ray absorption studies (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 3230-3233 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Near-edge x-ray absorption fine structure spectroscopy was used to study the effect of temperature on ion pairing of a potassium salt in a modified carbonate (MC3) solution and in a poly(ethylene oxide)-potassium salt complex that used MC3 as a plasticizer. The modified carbonate was made by attaching three ethylene oxide units to the four position of ethylene carbonate. Spectra were obtained, at the K edge of potassium, over the temperature range of 25–110 °C. Studies of reference systems showed a correlation between ion pairing and white line splitting in the near-edge region of the spectra. The degree of white line splitting was used as a qualitative indicator of the degree of ion pairing as a function of temperature. The results indicate that, in both systems, the number of ion pairs increases with increasing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467569
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  • 7
    Electronic Resource
    Electronic Resource
    A New Acylated N-Glycosyl Lactam from Aristolochia contorta (1992)
    s.l. : American Chemical Society
    Journal of natural products 55 (1992), S. 1165-1169 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50087a001
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  • 8
    Electronic Resource
    Electronic Resource
    Dielectric relaxations of homopolymer blends (1991)
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 6500-6501 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00024a020
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  • 9
    Electronic Resource
    Electronic Resource
    A branch bag and CO2 control system for long-term CO2 enrichment of mature Sitka spruce [Picea sitchensis (Bong.) Carr.] (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 16 (1993), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: This paper describes the construction and performance of branch bags and a CO2 control system used to fumigate branches of mature Sitka spruce trees with air enriched in CO2 (700 μmolmol-1). It contains some examples of results obtained using the system over the course of the first two growing seasons. The branch bags have run continuously for 2 years with very few problems. CO2 concentrations were within 20 μmol mol-1 of the target concentration for more than 90% of the time. Temperatures within the bags were slightly higher than ambient (1–2 °C) and this had some effect on phenology. Attenuation of quantum flux density (photosynthetically active radiation) was 10–15%. The branch bag system has enabled investigation into the effects of elevated CO2 on mature tissue without the problems and expense of fumigating whole trees. Growth in elevated CO2 resulted in an increase in starch and a decrease in soluble protein content of needles. Stomatal conductance was higher in elevated CO2 grown needles, and there was some evidence of an increase in photosynthetic capacity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1996.tb02072.x
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  • 10
    Electronic Resource
    Electronic Resource
    Tussockosis: an outbreak of dermatitis caused by tussock moths in Singapore (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 24 (1991), S. 0 
    Details
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: An outbreak of acute pruritic rash occurred in Mutch 1990 among 141 residents of a high-rise public housing estate in Bukit Panjang, Singapore. The typical rash consisted of urticarial lesions distributed over the limbs and trunk. The outbreak was associated with a transient increase in tussock moths in the residential estate following an unusual, short dry spell. The aetiology was established when patch tests with crude moth material produced similar eruptions in 5 out of 7 adult volunteers between 40 min and 12 h. Pharmacological experiments with an aqueous extract of moth hairs in isolated guinea pig ileum elicited a response similar to that induced by histamine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0536.1991.tb01698.x
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