ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the properties of Ga(AsP)/GaP strained-layer superlattices (SLSs) that have been doped by implantation of 1×1015/cm2, 75 keV Be+ followed by controlled-atmosphere annealing at 825 °C for 10 min. Our results indicate that doping of these strained-layer superlattices without disordering is a viable process. Liquid-helium temperature photoluminescence suggests a binding energy for the implanted acceptors of 50 meV, consistent with that of beryllium in GaP-based alloys. The implantation-doped regions exhibit room-temperature electrical activation of 15% and hole mobilities of 20 cm2/V s, consistent with the values expected for type-converted GaP-based alloys. SLS diodes fabricated by this process exhibit excellent rectification properties, with a forward turn-on voltage of approximately 1.8 V and low values of room-temperature reverse leakage current densities. Diodes formed from SLSs with original n-type doping of 1×1017/cm3 have typical reverse leakage current densities of 1×10−7 A/cm2 at −10 V, despite the depletion region penetrating approximately ten interfaces of the SLS at this bias. Deep-level transient spectroscopy demonstrates the existence of defect centers, whose densities and signatures are similar to those found in ion-implanted GaP. The implanted photodiodes exhibit a wavelength-dependent photoresponse characteristic of grown-junction SLS photodetectors in the same chemical system. Examination of the spatial response of the photodiodes to a tightly focussed (FWHM=2.45 μm) laser beam at a wavelength of 488 nm indicates that the photoresponse from the device is uniform to within 10% for regions away from the edges of the implanted regions. Modelling of the wavelength-dependent and the spatially dependent photoresponse allows an estimate of minority-carrier diffusion lengths for electrons and holes of 1.0 μm parallel to the SLS layers and 0.1 μm perpendicular to the SLS layers. The excellent electrical and optical properties of the implanted and annealed SLS materials implies additional device applications for these novel materials.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337796
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