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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 216-218 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the properties of Ga(AsP)/GaP strained-layer superlattices (SLSs) that have been doped by implantation of 1×1015/cm2, 75 keV Be+ followed by controlled-atmosphere annealing at 825 °C for 10 min. Our results indicate that doping of these strained-layer superlattices without disordering is a viable process. Liquid-helium temperature photoluminescence suggests a binding energy for the implanted acceptors of 50 meV, consistent with that of beryllium in GaP-based alloys. The implantation-doped regions exhibit room-temperature electrical activation of 15% and hole mobilities of 20 cm2/V s, consistent with the values expected for type-converted GaP-based alloys. SLS diodes fabricated by this process exhibit excellent rectification properties, with a forward turn-on voltage of approximately 1.8 V and low values of room-temperature reverse leakage current densities. Diodes formed from SLSs with original n-type doping of 1×1017/cm3 have typical reverse leakage current densities of 1×10−7 A/cm2 at −10 V, despite the depletion region penetrating approximately ten interfaces of the SLS at this bias. Deep-level transient spectroscopy demonstrates the existence of defect centers, whose densities and signatures are similar to those found in ion-implanted GaP. The implanted photodiodes exhibit a wavelength-dependent photoresponse characteristic of grown-junction SLS photodetectors in the same chemical system. Examination of the spatial response of the photodiodes to a tightly focussed (FWHM=2.45 μm) laser beam at a wavelength of 488 nm indicates that the photoresponse from the device is uniform to within 10% for regions away from the edges of the implanted regions. Modelling of the wavelength-dependent and the spatially dependent photoresponse allows an estimate of minority-carrier diffusion lengths for electrons and holes of 1.0 μm parallel to the SLS layers and 0.1 μm perpendicular to the SLS layers. The excellent electrical and optical properties of the implanted and annealed SLS materials implies additional device applications for these novel materials.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2487-2496 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of atomic surfaces is imaged by applying multivariate image classification techniques to multibias conductance data measured using scanning tunneling microscopy. Image pixels are grouped into classes according to shared conductance characteristics. The image pixels, when color coded by class, produce an image that chemically distinguishes surface electronic features over the entire area of a multibias conductance image. Such "classed" images reveal surface features not always evident in a topograph. This article describes the experimental technique used to record multibias conductance images, how image pixels are grouped in a mathematical, classification space, how a computed grouping algorithm can be employed to group pixels with similar conductance characteristics in any number of dimensions, and finally how the quality of the resulting classed images can be evaluated using a computed, combinatorial analysis of the full dimensional space in which the classification is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 831-833 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer superlattices of InAsSb were grown with low densities of dislocations and microcracks for optical characterization to determine the suitability of these structures for infrared photodetectors. Infrared transmission measurements revealed absorption throughout the 8–12 μm region and extended to longer wavelengths than predicted from consideration of the tensile strain-induced band-gap shift in a type-I superlattice. We conclude that a type-II superlattice occurs in the InAsSb system for alloy compositions 〉60% Sb.
    Type of Medium: Electronic Resource
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