Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Si delta-doped In0.15Ga0.85As/GaAs strained quantum well by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 276-278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped In0.15Ga0.85As/GaAs strained quantum wells are demonstrated by atmospheric pressure metalorganic chemical vapor deposition. The samples were characterized by variable temperature Hall effect, high magnetic field magnetoresistance, quantum Hall effect, capacitance-voltage measurements (C-V), and secondary-ion mass spectroscopy. The C-V profile showed a full width at half maximum as narrow as 15 A(ring). Two-dimensional electron gas transport was verified by observing step-like structures in the quantum Hall effect in samples containing sheet densities less than 5×1012 cm−2. Sheet densities as high as 1.0×1013 cm−2 were achieved. C and O contamination were not observed during the Si delta-doping process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352128
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The effect of Tb and Gd composition on the corrosion resistance of sputtered GdTbFeCo thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5310-5312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of GdxTby(Fe92Co8)100-x-y alloy thin films (about 200 nm in thickness) on glass substrates was prepared by dc magnetron sputtering using composite targets of pure Fe, Tb, Gd, and Co. Film composition was changed by varying the area percent of Tb and Gd in the target from 0% to 24%. In order to study the individual and combined effects of Gd and Tb, alloys of GdFeCo, TbFeCo, and GdTbFeCo were compared to each other and to an Fe92Co8 alloy. These comparisons were made on the basis of standard electrochemical tests, including anodic polarization as well as measurement of open circuit potentials and potential decay, in deaerated 0.15-M NaH2PO4 buffer solution (pH=4) at 25 °C. Results indicate that additions of Gd and Tb decrease the corrosion current of the Fe92Co8 alloy by a factor of 10 or more. Both Gd and Tb show very similar effects on the corrosion behavior of FeCo. Results suggest that a total of about 24% Gd and/or Tb may represent an optimum level for improving the corrosion resistance of GdTbFeCo magneto-optical thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344594
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photo-Hall studies of high-purity GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7425-7433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity GaAs layers which are nearly or fully depleted of carriers at low temperatures, due to surface and interface depletion effects, can be characterized electrically by utilizing the phenomenon of persistent photoconductivity. To facilitate electrical measurements of such layers, at 4.2 K the sample is momentarily illuminated by above band-gap light, which causes a reduction in the surface and interface depletion region. After illumination the effects of the photoinduced charge neutral region persist until at some higher temperature, the charge distribution in the sample relaxes back to its original equilibrium state. Results of variable temperature Hall-effect measurements performed under these conditions show that the sheet carrier concentration is increased as compared to measurements obtained in the dark but that the mobility is unchanged. The increase in the sheet carrier concentration after illumination results from the decrease of the surface and interface depletion widths. Such measurements can provide a method for judging the quality of layers that are fully depleted of carriers. The mobility of a high-purity GaAs layer which becomes fully depleted of carriers at low temperatures in the dark, measures 180 000 cm2/V s at 77 K by this method. Photocapacitance-voltage profiling measurements clearly show the change in the depletion widths. A model is presented which accurately depicts the temperature dependence of the band-bending potentials at the surface and interface after illumination with above band-gap light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349738
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1343-1345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357800
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free-exciton recombination occur at the same energy as the donor/conduction band-to-acceptor peaks for C acceptors in low-temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C-related transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102702
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2438-2440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity Si-doped molecular beam epitaxy (MBE) GaAs layers grown with and without the intentional introduction of CO gas have been characterized by Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that CO itself is not the source of residual C acceptor impurities in MBE GaAs samples. The observations of the correlation of residual C impurity incorporation with the residual CO gas in the MBE growth chamber suggest that the partial pressure of CO, PCO , gives a quantitative indication of background levels of hydrocarbons which are the source of C acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100410
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 51, 937 (1987)] (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1288-1288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99013
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High-purity epitaxial indium phosphide grown by the hydride technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1868-1870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100483
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Identification of residual donors in high-purity undoped p-type epitaxial GaAs by magnetophotoluminescence (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 980-982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual donor species, Si, S, and Ge, have been identified in high-purity undoped p-type epitaxial GaAs grown by metalorganic chemical vapor deposition and arsenic trichloride vapor phase techniques using the magnetic splittings of "two-electron'' replicas of donor bound exciton transitions at low temperature (∼1.8 K) and at a high magnetic field (9.0 T). This technique permits identification of donors in certain high-purity p-type GaAs samples in which donor species cannot be identified by photothermal ionization spectroscopy or any other technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100047
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of C acceptors in high-purity GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 596-598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98358
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...