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  • 1
    Electronic Resource
    Electronic Resource
    Reversible light-induced reactivation of acceptors in p-type hydrogenated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new effect in which hydrogen-passivated acceptor impurities in p-type GaAs are reactivated by low-intensity, above band gap illumination. Low-temperature photolumines cence was used to monitor the acceptor reactivation process. The light-induced reactivation is persistent at cryogenic temperatures, but the material relaxes back to the hydrogen-passivated state after annealing at moderate temperatures. Preliminary kinetic considerations, as well as the implications of this phenomenon on the fundamental and technological aspects of hydrogen passivation in semiconductors, are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101655
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  • 2
    Electronic Resource
    Electronic Resource
    Layer intermixing in heavily carbon-doped AlGaAs/GaAs superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5615-5620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion of Al and Ga in heavily C-doped Al0.3Ga0.7As/GaAs superlattice (SL) structures has been investigated quantitatively for a variety of ambient and surface encapsulation conditions. High-resolution photoluminescence (PL) at T=1.7 K was employed to evaluate the extent of layer intermixing after 24-h anneals at 825 °C. From the shifts to higher energies of the PL peaks due to n=1 electron-to-heavy hole transitions in the quantum wells of the annealed SLs relative to the position of this peak in the as-grown crystal, approximate Al-Ga interdiffusion coefficients (DAl-Ga) have been determined for different annealing conditions. For all encapsulants studied the interdiffusion in C-doped crystals is accelerated with increasing As4 pressure in the annealing ampoule. This result disagrees with previously observed trends for Group II-doped p-type structures, which have led to the charged point-defect model (Fermi-level effect) of Al-Ga interdiffusion. The Si3N4 cap has provided the most effective surface sealing against ambient-stimulated layer interdiffusion, and yielded DAl-Ga≈1.5−3.9×10−19 cm2/s. The most extensive layer intermixing has occurred for uncapped SL annealed under As-rich ambient (DAl-Ga≈3.3×10−18 cm2/s). These values are up to ∼40 times greater than those previously reported for nominally undoped AlxGa1−xAs/GaAs SLs, implying that the CAs doping slightly enhances host-atom self-diffusion on the Group III sublattice, but significantly less than predicted by the Fermi-level effect. The discrepancies between the experimental observations and the model, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346973
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  • 3
    Electronic Resource
    Electronic Resource
    Species dependence of passivation and reactivation of acceptors in hydrogenated GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3554-3563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of passivation and light-induced reactivation of acceptors in high-purity hydrogenated GaAs are investigated with low-temperature photoluminescence. The effectiveness of both processes has been found to be strongly dependent on the chemical identity of acceptor species, thus allowing a qualitative assessment of the relative stability of different acceptor-hydrogen passivating complexes in p-type hydrogenated GaAs. Efficient neutralization of acceptors in high-purity n-type hydrogenated GaAs is also reported, in contradiction with results of recent studies on heavily doped materials where passivation of minority dopants was not observed. The implications of these experimental data on theoretical models of the [AV:acceptor passivation mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346315
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogenation of Si- and Be-doped InGaP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5866-5870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In1−xGaxP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346961
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  • 5
    Electronic Resource
    Electronic Resource
    Growth-induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 741-754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of a defect responsible for the "g'' bound exciton line at 1.5112 eV that is frequently detected in photoluminescence spectra of GaAs grown by molecular beam epitaxy (MBE). A direct correlation has been observed between this line and a transition at 1.4946 eV, which is shown to result from a conduction band-to-acceptor recombination involving a shallow, unidentified acceptorlike defect that is labeled "A.'' The activation energy of the defect is 24.8±0.2 meV, about 1.7 meV lower than that of CAs acceptor. Upon hydrogenation the defect is passivated more extensively than any known shallow acceptor species in GaAs. This result is analyzed in terms of a passivation model, from which it can be inferred that the A defect is not due to a simple substitutional Group II impurity on a Ga site. Incorporation of the A defect strongly affects the luminescence properties of the material. An almost complete quenching of the donor-bound exciton lines, profound changes in the line shape and relative intensity of the free exciton recombination, and appearance of a sharp transition of unknown origin at 1.5138 eV were observed with increasing defect concentration. Apparently "donorless'' low temperature exciton recombination spectra are reported for defect-rich p-type MBE GaAs layers with donor concentrations as high as 7×1014 cm−3 and compensation ratios of ∼0.3. The dependence of the defect incorporation on MBE growth parameters is discussed. The feasibility of MBE growth of high purity, nearly shallow defect-free p-type GaAs layers at marginally As-stabilized surface conditions over an about 1–5 μm/h range of deposition rates is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346779
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  • 6
    Electronic Resource
    Electronic Resource
    Instability of partially disordered carbon-doped AlGaAs/GaAs superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2910-2912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattices of Al0.3Ga0.7As/GaAs grown by metalorganic chemical vapor deposition and heavily doped with carbon using CCl4 were annealed for 24 h at 825 °C under a variety of ambient and surface encapsulation conditions. Pronounced changes in photoluminescence from the annealed superlattices with storage time at room temperature, as opposed to an excellent reproducibility of that from the as-grown, not annealed samples, are reported. These changes may be indicative of degraded thermal stability of the annealed superlattice crystals due to high-temperature-induced lattice defects. The systematic failure to fabricate buried-heterostructure quantum well lasers via impurity-induced layer disordering in similarly doped AlGaAs/GaAs crystals, which may be related to the same effect, is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103750
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  • 7
    Electronic Resource
    Electronic Resource
    Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free-exciton recombination occur at the same energy as the donor/conduction band-to-acceptor peaks for C acceptors in low-temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C-related transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102702
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy
    Amsterdam : Elsevier
    Journal of Crystal Growth 105 (1990), S. 316-325 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90381-T
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  • 9
    Electronic Resource
    Electronic Resource
    Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 619-622 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The incorporation and amphoteric behavior of Si impurities in Si-doped (100) oriented molecular beam epitaxial (MBE) GaAs layers grown under different As4/Ga flux ratios but with a fixed Si flux have been studied using Hall effect measurements, photothermal ionization spectroscopy and photoluminescence. The Si donor concentration increases substantially with increasing As4/Ga flux ratio, while the Si acceptor concentration remains less than ∼ 1013 cm-3, regardless of the variation of As4/Ga flux ratio. The observed increase of carrier concentration with increasing V/III ratio is not due to a change of site preference of Si impurities from Ga to As sublattice sites as previously supposed, but is due to the increase in incorporation of Si donor. This result can be explained by the kinetic effects associated with surface reaction processes involved in Si impurity incorporation. From these results it is clear that the sticking coefficient of Si is less than unity, and varies with the growth conditions.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740141010
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