ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The incorporation and amphoteric behavior of Si impurities in Si-doped (100) oriented molecular beam epitaxial (MBE) GaAs layers grown under different As4/Ga flux ratios but with a fixed Si flux have been studied using Hall effect measurements, photothermal ionization spectroscopy and photoluminescence. The Si donor concentration increases substantially with increasing As4/Ga flux ratio, while the Si acceptor concentration remains less than ∼ 1013 cm-3, regardless of the variation of As4/Ga flux ratio. The observed increase of carrier concentration with increasing V/III ratio is not due to a change of site preference of Si impurities from Ga to As sublattice sites as previously supposed, but is due to the increase in incorporation of Si donor. This result can be explained by the kinetic effects associated with surface reaction processes involved in Si impurity incorporation. From these results it is clear that the sticking coefficient of Si is less than unity, and varies with the growth conditions.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740141010
