Publikationsdatum:
2014-02-26
Beschreibung:
In this article we consider a general model for phosphorus diffusion in silicon under extrinsic doping conditions. At such high concentrations we have to include the charged species and the internal electric field of the crystal, both of which can have profound effects on diffusion. In principle, this leads to a very large number of drift--diffusion--reaction equations: one for each charge state of every species, plus one Poisson equation to describe the internal electric field (in terms of the electron/hole concentration). The number of equations can be reduced substantially by making additional assumptions on the distribution of charge states and local equilibrium assumptions concerning the reaction terms. The resulting model turns out to be very interesting for numerical investigation. We solve the problem numerically in two space dimensions with the adaptive finite element program KARDOS and describe the numerical method used here to treat the resulting drift--diffusion--reaction problem.
Schlagwort(e):
ddc:000
Sprache:
Englisch
Materialart:
reportzib
,
doc-type:preprint
Format:
application/postscript
Format:
application/pdf
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