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  • Electronic Resource  (5)
  • 1990-1994  (5)
  • 1970-1974
  • 1991  (2)
  • 1990  (3)
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  • Electronic Resource  (5)
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  • 1990-1994  (5)
  • 1970-1974
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 39-41 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon (a-Si:H) has been investigated to find the origin of the difference of a-Si:H/SiN interface properties caused by the order of deposition. Sheet conductance of the on-state in inverted staggered (a-Si:H on SiN) thin-film transistors (TFTs) increases gradually with the substrate temperature (Tsub) of SiN, but decreases rapidly with the Tsub of SiN in staggered TFTs (SiN on a-Si:H). Photoluminescence experiments indicated that the degradation in staggered TFTs was due to the creation of defects in a-Si:H by the deposition of the SiN overlayer. It was shown by Fourier transform infrared attenuated total reflection that the origin of the defects was hydrogen effusion from a-Si:H.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2143-2147 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes two types of photodiode arrays using indium-tin-oxide/amorphous silicon (ITO/a-Si:H) junctions for a contact-type linear image sensor. One type is a photodiode array of separated ITO electrodes, an a-Si:H stripe layer, and a common metal (Cr) electrode. The other consists of a common ITO electrode, an a-Si:H stripe layer, and separated Cr electrodes. We investigated the bias dependence of the photocurrent and its spatial distribution for the two types of diode array. Our results indicate that the photocarriers generated around the element for a common ITO electrode type deteriorate the resolving power of the diode array, which can be improved by using separated ITO electrodes. A separated ITO electrode increases the modulation transfer function and the fineness of linear image sensors.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Surgical and radiologic anatomy 13 (1991), S. 89-104 
    ISSN: 1279-8517
    Keywords: Gallbladder ; Lymphatic system ; Carcinoma ; Macroscopic anatomy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé A partir de la dissection fine des lymphatiques de la vésicule effectuée sur 4 sujets adultes, trois voies de drainages ont pu être schématisées. 1) La voie cholécysto-rétro pancréatique qui peut être considérée comme la principale, comporte deux trajets, l'un descendant en spirale de la face antérieure de la voie biliaire principale vers son bord postéro-droit, et l'autre descendant directement à la face postérieure du conduit biliaire. Dans leur segment rétroportal, ces voies convergent vers un important nœud lymphatique qui apparaît comme le principal nœud terminal de cette voie. Nous l'avons dénommé le nœud principal rétroportal. 2) La voie cholécysto-cœliaque est utilisée par quelques lymphatiques de la vésicule biliaire qui se dirigent vers la gauche à travers le ligament hépato-duodénal pour rejoindre les nœuds cœliaques. 3) La voie cholécysto-mésentérique est empruntée par des lymphatiques qui descendent vers la gauche en avant de la veine porte et rejoignant les nœuds situés à l'origine de l'artère mésentérique supérieure. Ces trois voies convergent vers les nœuds lymphatiques abdomino-aortiques situés à proximité de la veine rénale gauche; les nœuds situés dans l'espace inter-aortico-cave seront particulièrement importants.
    Notes: Summary Based upon the detailed dissections of the lymphatic system of four adult cadavers, the lymphatic drainage of the gallbladder was divided into three pathways. 1) The cholecysto-retropancreatic pathway, which can be regarded as the main pathway, had two routes, one running spirally and posteriorly from the anterior surface of the common bile duct to the right, and the other running almost straight down from the posterior surface of the common bile duct. At the retroportal segment, these routes converged at a large lymph node, which appeared critical as the main terminal lymph node of this pathway. We designated this node the principal retroportal node. 2) The cholecysto-celiac pathway was the route by which some of the lymphatics from the gallbladder ran to the left through the hepatoduodenal ligament to reach the celiac nodes. 3) The cholecysto-mesenteric pathway was the route by which some of the lymphatics ran to the left in front of the portal vein and connected with the nodes at the superior mesenteric root. These three pathways converged with the abdomino-aortic lymph nodes near the left renal vein; in particular, the nodes in the interaortico-caval space were considered important.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 25 (1990), S. 4247-4254 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Silicon carbide fibres (Nicalon) were coated with pure aluminium and aluminium alloys containing silicon. The coated fibres were annealed to produce an interfacial reaction zone between the coated layer and the fibre. The effect of this reaction zone on the tensile strength of the fibre was investigated. During the early stages of growth the reaction zone of the fibre is thin, and the strength of the fibre is controlled by inherent defects so that the fibre retains its original strength. After the early stages, notches are formed in the reaction zone of the fibre on loading at a small strain and the fibre fractures when a notch extends into the fibre. In this stage the fibre strength is dependent on the thickness of the reaction zone. An alloying addition of 1 or 5 at % Si to the aluminium matrix was found to be effective in retarding the growth rate of the reaction zone.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 25 (1990), S. 3273-3280 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An investigation is carried out on the interfacial wetting behaviour and reactions between aluminium and alumina fibres (85mass% Al2O3 and 15mass% SiO2). Aluminium is coated onto alumina fibres by a vacuum evaporation technique and the surface of the fully coated fibres and the edge of the partially coated fibres are examined by scanning electron microscope after heat treatments at various temperatures. Within a temperature regime between 943 and 1273 K, occurrence of such interfacial reactions as 4Al(I) + Al2O3(s) → 3Al2O3(g) and 4Al(I) + 3SiO2(s) → 2Al2O3(s) + 3Si(s) are detected. It is found that molten aluminium can cover the alumina fibre surface but it peels off near the edge of the coating film on a partially coated fibre, showing the very weak interface cohesion. This is ascribed to the lack of a stable compound formation at the interface. Results of tensile test show that the strength of the coated fibres is degraded after heat-treating at above the melting point of aluminium. The culprits for the tensile failure of alumina fibres are evaluated by the Weibull distribution theory.
    Type of Medium: Electronic Resource
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