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  • Electronic Resource  (7)
  • 1990-1994  (7)
  • 1990  (7)
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  • Electronic Resource  (7)
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  • 1990-1994  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of semiconducting FeSi2 films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1726-1734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron-beam deposited iron layers. As substrates we use single-crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low-pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band-gap of 0.85 eV. Optical transitions at energies above 1.4 eV are investigated by spectroscopic ellipsometry. Measurements of the subgap defect absorption, photoluminescence, conductivity, and of the Hall mobility suggest that lower growth temperatures yield material of better quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346601
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Photoluminescence study of impurity states in aluminum antimonide'' [J. Appl. Phys. 67, 1478 (1990)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1944-1944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347200
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  • 3
    Electronic Resource
    Electronic Resource
    Implantation and diffusion of noble gas atoms during ion-beam etching of silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6179-6186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excessive damage and high defect density generated during ion-beam etching of crystalline Si is characterized by Rutherford backscattering, photoluminescence, and transmission electron microscopy. In samples etched at room temperature, a highly damaged surface layer (d≈5 nm) with a large concentration of noble gas atoms is detected and analyzed using Rutherford backscattering in axial channeling geometry. Point defects due to the low-energy noble gas ion implantation are produced within a depth of 100 nm and deeper, and are monitored by their characteristic photoluminescence. The intensity of the noble-gas-defect photoluminescence is studied for different ion-beam energies (200–2000 eV) and crystal orientations. A threshold to produce the defects can then be determined, leading to an estimate of the number of vacancies contained in the noble gas defect. Annealing of etched samples at 650 °C causes the formation of different new photoluminescent centers. Although little is known about the structure of these defects, it is observed that the defects effectively getter copper. Further annealing of the Ar-etched samples at 1050 °C causes the formation of Ar bubbles with an average diameter of about 5 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346908
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence study of impurity states in aluminum antimonide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1478-1482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized Czochralski-grown undoped AlSb single crystals by low-temperature photoluminescence and photoluminescence excitation spectroscopy. An excitonic band-gap energy Egx =1.667±0.001 eV of AlSb was determined. In all samples we detect a dominant donor and acceptor. The donor binding energy ED =151±3 meV and acceptor binding energy EA =37±3 meV are deduced from donor-acceptor pair luminescence and the excited states of the acceptor from selective pair excitation. We tentatively identify the donor as sulfur and the acceptor as carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345655
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  • 5
    Electronic Resource
    Electronic Resource
    The frequency of the CF ΔF508 deletion in CF chromosomes of different ethnic origin (1990)
    Springer
    Human genetics 〈Berlin〉 85 (1990), S. 392-393 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The identification of the molecular defect in a significant proportion of cystic fibrosis families (in our series up to 60%) allows direct DNA diagnosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02428269
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  • 6
    Electronic Resource
    Electronic Resource
    Intercellular spaces enhance potato tuber elasticity (1990)
    Springer
    Potato research 33 (1990), S. 335-340 
    Details
    ISSN: 1871-4528
    Keywords: water saturation ; tuber injury ; lenticel perforation ; tuber maturity ; Solanum tuberosum L.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary The intercellular volume within tuber tissue increases with tuber maturation. At the same time, both tuber injury after mechanical load and lentical perforation after water uptake by tubers in wet peat decreases. The degree of tuber injury is correlated with intercellular space (r=−0.667,n=16) and with water saturation of tissue (r=0.697,n=16). The tubers lose water during storage. In wet soil wilted tubers take up significantly higher amounts of water than turgid tubers, and lenticel perforation is much more frequent. Tuber maturation in autumn and low water loss during storage enhance the cushioning effect of the intercellular gas volume of tuber tissue against outside mechanical load and internal tension after water uptake.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02359307
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  • 7
    Electronic Resource
    Electronic Resource
    Microdissection and microcloning of human chromosome 7q22-32 region (1990)
    Springer
    Somatic cell and molecular genetics 16 (1990), S. 123-128 
    Details
    ISSN: 1572-9931
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Genetic information contributing to cystic fibrosis in addition on the CF gene is suggested to reside on the long arm of the human chromosome 7. In our attempt to analyze this genomic region in detail, we generated a region-specific DNA probe library by microdissection and microcloning of the midpiece of the chromosome 7q arm. Microdissection was performed in unstained metaphase spreads from a human × mouse hybrid cell line containing chromosome 7 as the only human chromosome. We obtained 593 clones from 75 dissected chromosomal fragments. At least 88% of the microclones were true recombinants; 40% of the clones contained repetitive sequences as determined by plaque hybridization with genomic DNA as probe. The overall mean fragment size of insert fragments was 3.2 kb, the median size was 3.5 kb. Regional mapping of 30 DNA fragments was performed by the aid of hybrid cell lines containing different segments of human chromosome 7; 50% of the microcloned inserts were found to map to 7q22-32.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01233042
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