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  • Electronic Resource  (5)
  • 1990-1994  (5)
  • 1980-1984
  • 1992  (5)
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  • Electronic Resource  (5)
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  • 1990-1994  (5)
  • 1980-1984
Year
  • 1
    Electronic Resource
    Electronic Resource
    Wide electron gas with periodic density modulation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1460-1463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and characterization of a high-quality wide (∼2000 A(ring)) three-dimensional electron gas (3DEG) with periodic density modulation (period ∼200 A(ring)) in a modulation-doped wide parabolic potential well with a superimposed superlattice. Computer-controlled molecular beam epitaxy is used to synthesize the potential well as a graded AlxGa1−xAs digital alloy. The density-modulated 3DEG is compared to a uniform 3DEG of the same average density and width in a parabolic well without the superlattice. The Al mole fraction profiles for the two samples are measured in calibration runs immediately prior to actual growths. The density-modulated 3DEG has a low-temperature in-plane mobility in excess of 105 cm2/V s, compared to ∼2×105 cm2/V s for the uniform 3DEG. Capacitance-voltage measurements directly reveal the modulation of the density of the electron gas in the parabolic well with superimposed superlattice, and the absence of any density modulation for the gas in the bare parabolic well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351708
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of the electronic properties of in situ annealed low-temperature gallium arsenide grown by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2005-2007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current conduction through in situ annealed low-temperature gallium arsenide (LT GaAs) grown by molecular beam epitaxy (MBE) has been studied using Schottky diodes. The dominant transport mechanism in these films was found to be space-charge-limited current conduction in the presence of deep level states. We also examined two LT GaAs films, one with initially 4000 A(ring) thick subsequently etched back to 2000 A(ring) and the other sample with an initial thickness of 2400 A(ring), and found that the excess arsenic redistribution or clustering, carrier trap levels, and concentration depend strongly on the initial thickness of the LT GaAs film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107125
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Far-infrared capture of electrons by DX centers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1972-1974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107115
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral motion of terrace width distributions during step-flow growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 645-647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two phenomena that occur during (Al,Ga)Sb lateral superlattice (LSL) growth which have implications on our understanding of adatom/step edge interactions on vicinal surfaces: shifts of the lateral distribution of terrace widths in the direction of step propagation, and lateral variations in the superlattice tilt angle that are correlated with the terrace width distribution. Both phenomena can be explained with a model of step-flow growth that includes both asymmetric adatom attachment at step edges and anisotropic adatom crossing over multiple step edges. A comparison between numerical simulations of this model and experimentally observed (Al,Ga)Sb LSL terrace width distributions leads to quantitative estimates of adatom migration characteristics. We find that at least one type of adatom, probably Ga, has a migration length equivalent to several terrace widths, and moves up and down step edges nearly isotropically. This method of determining adatom migration characteristics can be extended to any material that LSL layers can be grown above and below as terrace width markers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107809
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Remotely-doped superlattices in wide parabolic GaAs/AlxGa1−xAs quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1573-1575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the digital alloy technique, a series of high-mobility remotely doped GaAs/AlGaAs coupled multiple quantum well structures have been produced by the superposition of a wide parabolic quantum well and a square superlattice potential. Structures containing up to twenty superlattice periods with low temperature Hall mobilities from 23 000 to 100 000 cm2/V s have been produced. Fourier analysis of low field Shubnikov–de Haas oscillations, capacitance-voltage and Hall measurements of a 200 A(ring) period superlattice in a 1600 A(ring) wide parabolic well indicate the occupation of four superlattice periods with subband spacings in good agreement with theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107500
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    Paper (German National Licenses)
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