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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6598-6605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scattering rates for the intra- and intersubband transitions of electrons in a GaAs/AlAs quantum well with a central AlAs thin layer assisted by the emission and absorption of optical phonon modes are calculated in the case where a transversal electric field is applied through the structure in order to modulate the electronic density inside the well. The role of the confined and interface phonon modes in reducing the electron mobility is analyzed separately to permit the identification of the effect of the transversal electric field on this mobility. The electron behavior indicates that electrons of different subbands can be separated in real space by the applied transversal electric field. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370167
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  • 2
    Electronic Resource
    Electronic Resource
    Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2687-2690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots (QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows the ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371111
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetoresistivity and metamagnetism of the Nd33Fe50Al17 alloy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ternary phase has been identified in the rare-earth transition metal Nd–Fe–Al system. This phase has a composition close to Nd5(Fe3Al)12 and is antiferromagnetic with a Neel temperature of approximately 260 K. A clear step appears in magnetization curves of the isotropic ribbon at temperatures below 140 K, indicating metamagnetism. Magnetoresistivity (MR) has been observed in this compound. MR increases with decreasing temperature and is estimated to be 7.2% at 4.2 K. This compound exhibits MR of 1% in the paramagnetic state at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124812
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  • 4
    Electronic Resource
    Electronic Resource
    Near infrared excited micro-Raman spectra of 4:1 methanol–ethanol mixture and ruby fluorescence at high pressure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8011-8017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near infrared (NIR) lasers, as a new excitation source for Raman spectroscopy, has shown its unique advantages and is being increasingly used for some special samples, such as those emitting strong fluorescence in the visible region. This article focuses on some issues related to high-pressure micro-Raman spectroscopy using NIR excitation source. The Raman spectra of 4:1 methanol–ethanol mixture (4:1 M–E) show a linear variation in both Raman shifts and linewidths under pressure up to 18 GPa. This result is useful in distinguishing Raman scattering of samples from that of the alcohol mixture, an extensively used pressure-transmitting medium. The R1 fluorescence in the red region induced by two-photon absorption of the NIR laser is strong enough to be used as pressure scale. The frequency and line width of the R1 lines are very sensitive to pressure change and the glass transition of the pressure medium. Our results manifest that it is reliable and convenient to use NIR induced two-photon excited fluorescence of ruby for both pressure calibration and distribution of pressure in the 4:1 M–E pressure transmitting medium. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370636
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  • 5
    Electronic Resource
    Electronic Resource
    Hot electron effects and dynamic behavior of gold doped germanium thin films as cryogenic phonon sensors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8274-8280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As a part of continuing development of thin film Ge1−xAux thermistors for ultralow mass highly sensitive cryogenic phonon sensors, the ac responsivity and hot electron effects have been explored. Responsivity as high as 1.6 nV/eV was achieved at 20 mK. A derivation is presented for the power index β=6 for electron-phonon heat exchange in variable range hopping conductivity. Applying our previously developed optimization theory for bias-assisted tunneling, hot electron effects and bias-assisted tunneling were shown to account equally well for the nonlinear dc current–voltage characteristic. However, a model was developed for the thermal time constants of these devices which does predict a clear distinction between bias-assisted tunneling and the hot electron effects. Comparison of data with this model showed that bias-assisted tunneling rather than hot electron effects was the dominant finite-bias effect in the Ge1−xAux thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370669
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  • 6
    Electronic Resource
    Electronic Resource
    Surface discharge and tracking phenomena induced on acrylonitrile-butadiene-styrene polymer dielectric material by acid rain (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7023-7029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discharge and tracking phenomena induced on the polymer dielectric materials by acid rain are investigated by the accelerated aging of acrylonitrile-butadiene-styrene copolymer in artificial rainwater in this article. Based on the investigation of acid rain, the artificial rainwater is chosen to agree well with the actual ingredients of precipitation. The influence of hydrophobicity degradation on the surface discharge and tracking is studied. The relations among the surface discharge, tracking, hydrophobicity, and microchemical structure and physical morphology of material are furthermore discussed. Experimental results show that the polymer dielectric materials suffer a large attack and degradation from acid rain. The dielectric surface degrades and becomes rough, and the hydrophobicity decreases so that the surface discharge and tracking may occur on them. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370507
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  • 7
    Electronic Resource
    Electronic Resource
    Emission of prompt electrons during excimer laser ablation of aluminum targets (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on prompt emission of fast electrons occurring during xenon–fluoride (351 nm) laser ablation of aluminum targets in the nanosecond regime. We have measured both the kinetic energy distribution and the energy-integrated time-of-flight distribution of these electrons. Experimental data evidence that the energetic electrons are produced during the laser pulse as a consequence of two-photon processes, and that space-charge effects influence the photoemitted electron kinetic energy, leading to prompt electrons kinetic energy distributions extending up to (approximate)15 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124259
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  • 8
    Electronic Resource
    Electronic Resource
    Strong influence of SiO2 thin film on properties of GaN epilayers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 818-820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO2 layer. As a reference, SixNy was found to have little effect on PL performance of GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123378
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  • 9
    Electronic Resource
    Electronic Resource
    Cubic-phase GaN light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2498-2500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123019
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of residual stress on thermal expansion behavior (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3294-3296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the thermal expansion behavior of a material can be substantially modified by the presence of residual stresses. In the case of a composite tube made of two layers of dissimilar steels, in situ neutron diffraction measurements revealed a significant difference in the coefficients of thermal expansion along the radial and tangential directions. It is shown that the observed difference in thermal expansion is due to the change of residual stresses with temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125329
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