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  • Electronic Resource  (81)
  • 2000-2004  (35)
  • 1995-1999  (45)
  • 1935-1939  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon–silicon- carbide interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6601-6608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excimer laser ablation has been used to deposit epitaxial films of β-SiC on single-crystal Si wafers, in a vacuum, at substrate temperatures between 1050 and 1250 °C. Such films can be grown by ablating ceramic SiC, carbon, or alternating silicon and carbon targets at a range of growth rates. X-ray θ-2θ diffraction shows the presence of strong, sharp reflections from crystal planes parallel to the substrate, 200 and 400 for [100] substrates and 111 and 222 for [111] oriented substrates. Wrong reflections, such as 111 for [100] substrates, are extremely weak or absent, indicating alignment with the substrates. The characterization of these films by a number of techniques is discussed. In all cases the film-substrate interface shows a characteristic microstructure of cavities in the Si substrate, similar to that observed for the carbonization layer initially formed as a precursor for chemical-vapor deposition of SiC films on Si. This implies that the initial film growth, for all cases, involves chemical reaction of the Si substrate with the carbon in the plume as well as transport through the growing film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359070
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  • 2
    Electronic Resource
    Electronic Resource
    Computer simulation of disordering and amorphization by Si and Au recoils in 3C–SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4275-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics has been employed to study the disordering and amorphization processes in SiC irradiated with Si and Au ions. The large disordered domains, consisting of interstitials and antisite defects, are created in the cascades produced by Au primary knock-on atoms (PKAs); whereas Si PKAs generate only small interstitial clusters, with most defects being single interstitials and vacancies distributed over a large region. No evidence of amorphization is found at the end of the cascades created by Si recoils. However, the structure analysis indicates that the large disordered domains generated by Au recoils can be defined as an amorphous cluster lacking long-range order. The driving force for amorphization in this material is due to the local accumulation of Frenkel pairs and antisite defects. These results are in good agreement with experimental evidence, i.e., the observed higher disordering rate and the residual disorder after annealing for irradiation with Au2+ are associated with a higher probability for the in-cascade amorphization or formation of a large disordered cluster. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355717
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  • 3
    Electronic Resource
    Electronic Resource
    In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7671-7678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au2+ (60° off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a 〈0001〉-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au2+/nm2 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373439
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  • 4
    Electronic Resource
    Electronic Resource
    Optical study of silicon-containing amorphous hydrogenated carbon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2820-2825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-containing amorphous hydrogenated carbon films deposited by a plasma-enhanced chemical vapor deposition process were studied using both Raman and ellipsometry spectroscopies. Analyses of the experimental data from both these techniques yielded valuable information about the microstructure of the films. The silicon incorporation in amorphous hydrogenated carbon breaks down large size sp2 carbon clusters and enhances sp3 bonding. The reduction of large sp2 graphitic defects, the enhancement of sp3 bonding, and the associated microstructure changes are responsible for the desired properties of silicon-containing amorphous hydrogenated carbon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367042
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  • 5
    Electronic Resource
    Electronic Resource
    Irradiation-induced formation of nanoparticles in cadmium niobate pyrochlore (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 670-672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential irradiation with 3 MeV He+ and 10 MeV C3+ ions performed at T=150 K produces two separate amorphous buried layers in cadmium niobate pyrochlore single crystals. Further irradiation at room temperature results in the formation of nanometer-scale particles in the amorphized regions. An ion-cleaving technique was used to facilitate the observation of these nanoparticles by using scanning electron microscopy. Complete granulation with particle sizes ranging from 30 to 150 nm was observed. X-ray energy-dispersive spectrometry analysis indicates that the numerically large population of smaller particles (∼50 nm) contains a high Cd content (∼70%) and the numerically smaller population of larger particles (〉100 nm) contains negligible Nb with a Cd-to-O ratio of about 1:0.54.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445808
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  • 6
    Electronic Resource
    Electronic Resource
    The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 626-628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman signature of the local Ge–C mode for substitutional C is identified as a narrow line (8 cm−1 full width at half maximum) near 530 cm−1 in alloy films of Ge1−yCy (0≤y≤0.07) grown on Ge (100) substrates by low-temperature (200 °C) molecular beam epitaxy. The intensity of the Ge–C line relative to the c-Ge line suggests that only a small fraction of the nominal C is in substitutional sites. In ternary alloys of Ge1−x−ySixCy with x=0.1 and 0.2 and y=0.03, the Ge–C mode disappears, suggesting a strong bias towards C bonding with Si as opposed to Ge. In Ge1−xSnx films the Ge–Sn mode is seen at 263 cm−1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121877
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-channeling study of the SiC/Si/SiO2/Si interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling has been used in a detailed study of 3C–SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick 〈100〉-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC–Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC–Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124143
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  • 8
    Electronic Resource
    Electronic Resource
    Determining magnetic anisotropies from hysteresis loops (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for determining magnetic anisotropies from hysteresis loops is presented. While sweeping the loop, a magnetic field is applied perpendicularly to the sweep-field axis. This causes the magnetization to rotate reversibly in a wide field range and still reach saturation at finite fields. An example is given whereby surface and volume anisotropies are determined from magneto-optical Kerr effect loops in Co films grown on stepped Cu(001). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118316
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the microstructural development and optical properties of epitaxial Ge1−xCx alloys (0〈x〈0.1) grown on Si(100) by low-temperature (200 °C) molecular-beam epitaxy. Films with C concentrations below 2%–3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E1 critical point in Ge. No new features attributable to Ge–C vibrational modes could be identified using Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117703
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  • 10
    Electronic Resource
    Electronic Resource
    Screening Cucumis sativus landraces for resistance to cucumber vein yellowing virus (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 122 (2003), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Cucumber production in Spain is being threatened by the cucumber vein yellowing virus (CVYV), which has been causing severe yield losses since it was first detected in 2000. Although most of the Spanish cucumber production is based on hybrid cultivars, farmers have grown cucumber landraces for centuries. A collection of 46 Spanish cucumber landraces, four melon cultivars and one accession of Cucumis africanus, were evaluated for resistance to CVYV. An isolate of CVYV from Almeria, closely related to CVYV from Israel, was used. CVYV was mechanically transmitted and detected by reverse transcriptase polymerase chain reaction and molecular hybridization. Only mild infections were observed in melons, while the wild species C. africanus was susceptible to this disease. Most of the cucumber accessions assayed were highly susceptible to CVYV and showed vein-clearing symptoms, severe growth reduction and a high viral accumulation. Several cucumber accessions were partially resistant to this virus, displaying mild symptoms and a significantly reduced viral accumulation. These partially resistant varieties could be cultivated under integrated production systems, and also be used as resistance sources to develop new cucumber hybrids resistant to CVYV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2003.00882.x
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