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  • 1
    Electronic Resource
    Electronic Resource
    Determination of Alkylbenzenesulfonates by Ultraviolet Spectrophotometry. (1962)
    s.l. : American Chemical Society
    Analytical chemistry 34 (1962), S. 1844-1845 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60193a048
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  • 2
    Electronic Resource
    Electronic Resource
    Correction: Identification of Surface Functional Groups on Active Carbon by Infrared Internal Reflections Spectrometry. (1969)
    s.l. : American Chemical Society
    Analytical chemistry 41 (1969), S. 765-765 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60275a048
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  • 3
    Electronic Resource
    Electronic Resource
    Computer simulation of disordering and amorphization by Si and Au recoils in 3C–SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4275-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics has been employed to study the disordering and amorphization processes in SiC irradiated with Si and Au ions. The large disordered domains, consisting of interstitials and antisite defects, are created in the cascades produced by Au primary knock-on atoms (PKAs); whereas Si PKAs generate only small interstitial clusters, with most defects being single interstitials and vacancies distributed over a large region. No evidence of amorphization is found at the end of the cascades created by Si recoils. However, the structure analysis indicates that the large disordered domains generated by Au recoils can be defined as an amorphous cluster lacking long-range order. The driving force for amorphization in this material is due to the local accumulation of Frenkel pairs and antisite defects. These results are in good agreement with experimental evidence, i.e., the observed higher disordering rate and the residual disorder after annealing for irradiation with Au2+ are associated with a higher probability for the in-cascade amorphization or formation of a large disordered cluster. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355717
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  • 4
    Electronic Resource
    Electronic Resource
    In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7671-7678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au2+ (60° off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a 〈0001〉-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au2+/nm2 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373439
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  • 5
    Electronic Resource
    Electronic Resource
    Irradiation-induced formation of nanoparticles in cadmium niobate pyrochlore (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 670-672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential irradiation with 3 MeV He+ and 10 MeV C3+ ions performed at T=150 K produces two separate amorphous buried layers in cadmium niobate pyrochlore single crystals. Further irradiation at room temperature results in the formation of nanometer-scale particles in the amorphized regions. An ion-cleaving technique was used to facilitate the observation of these nanoparticles by using scanning electron microscopy. Complete granulation with particle sizes ranging from 30 to 150 nm was observed. X-ray energy-dispersive spectrometry analysis indicates that the numerically large population of smaller particles (∼50 nm) contains a high Cd content (∼70%) and the numerically smaller population of larger particles (〉100 nm) contains negligible Nb with a Cd-to-O ratio of about 1:0.54.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445808
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-channeling study of the SiC/Si/SiO2/Si interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling has been used in a detailed study of 3C–SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick 〈100〉-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC–Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC–Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124143
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  • 7
    Electronic Resource
    Electronic Resource
    Indentation testing of nuclear-waste glasses (1984)
    Springer
    Journal of materials science 19 (1984), S. 2533-2545 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The fracture properties of several nuclear-waste glasses were determined by indentation techniques. The fracture toughness,K Ic, was calculated from the measurement of radial cracks around Vickers diamond indentations as a function of applied load, and the results agree quite satisfactorily with values obtained by the Hertzian indentation technique. The fracture toughness of the waste glasses containing simulated fission products ranged from 0.9 to 1.1 MN m−3/2 in air, with slightly higher values measured in dry nitrogen. The hardness was also obtained from the Vickers indentations and the ratioH/E was determined from the elastic recovery of Knoop diamond indentations. The values ofE deduced fromH andH/E were within 15% of values measured by ultrasonic tests. The results along with the limitations of the different techniques are discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550807
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