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  • 1
    Electronic Resource
    Electronic Resource
    Circular dichroism in core-level photoemission from nonmagnetic and magnetic systems: A photoelectron diffraction viewpoint (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6477-6477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic circular dichroism (MCD) in x-ray absorption represents an exciting new technique for studying and imaging magnetic systems. However, there are to date relatively few studies of dichroism in the inherent process involved: photoelectron emission. We will here illustrate that photoelectron diffraction (PD) theory provides a fruitful way of analyzing dichroism data for both nonmagnetic and magnetic systems. Circular dichroism (CD) has been observed in core-level photoemission from nonmagnetic systems: C 1s from CO/Pd(111) and Si 2p from Si(100). For CO/PD(111), chirality in the experimental geometry is readily discernible, but for Si(100), it is more difficult to define the chirality with simple vector relationships. PD effects implicitly contain all information on such core-level dichroism, and we will present multiple-scattering simulations of the observations to date. We will also discuss the role of such CD effects in core-level MCD measurements, using Fe 2p emission from magnetically aligned Fe(110) as an example. The analysis of such MCD data has so far been qualitative. We will present a more quantitative analysis including final-state effects such as the interference of l±1 photoelectron channels and spin-dependent scattering and diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358229
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic Resolution Imaging of Au Nanocluster Dispersed in TiO2, SrTiO3, and MgO (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Gold nanoclusters dispersed in single crystal TiO2, MgO, and SrTiO3 have been prepared by ion implantation at 300–975 K and subsequent annealing at 1275 K for 10 h. High-resolution transmission electron microscopy and high-angle annular dark field (HAADF) imaging in aberration corrected scanning transmission electron microscope (STEM) have been used to characterize the microstructure of the gold nanoclusters dispersed materials. STEM-HAADF imaging with atomic resolution has directly revealed for all three materials that Au atoms partially occupy cation lattice positions. Cavities up to several tens of nanometers were observed in MgO and SrTiO3. The cavities and gold clusters are spatially associated in MgO and SrTiO3, indicating a strong interaction between the Au cluster and cavities. For MgO and SrTiO3, the faceting planes appear to be the same for both nanometer-sized cavity and the Au cluster, demonstrating that both the surface energy and the interfacial energy between Au cluster and the matrix are lowest on these planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00579.x
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  • 3
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of the temperature dependence of magnetic order on ferromagnetic and antiferromagnetic surfaces: Implications for spin-polarized photoelectron diffraction (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6452-6452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Ising-model Monte Carlo calculations to study the magnetic order near cubic ferromagnetic and antiferromagnetic surfaces. The antiferromagnets were studied with and without frustrated next-nearest-neighbor interactions. Intralayer and interlayer spin-spin correlation functions have been calculated as a function of the relative coupling strength in the surface layer. If this coupling strength is more than a few times the bulk value, a distinct surface phase transition is observed at temperatures TC,surf or TN,surf that can be significantly above the corresponding bulk values, TC,bulk or TN,bulk. These calculations suggest that previous spin-polarized photoelectron diffraction measurements on antiferromagnetic KMnF3(110) and MnO(001) could in fact have been observing such surface transitions at TN,surf values of 2.7 and 4.5 times TN,bulk, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358222
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  • 4
    Electronic Resource
    Electronic Resource
    In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7671-7678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au2+ (60° off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a 〈0001〉-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au2+/nm2 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373439
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  • 5
    Electronic Resource
    Electronic Resource
    High energy ion beam studies of ion exchange in a Na2O–Al2O3–SiO2 glass (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1910-1920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As part of understanding the processes leading to sodium release and ion exchange, the surface and near surface reaction regions on several specimens of a Na2O–Al2O3–SiO2 glass have been examined after exposures to isotopically labeled aqueous solutions. The majority of the analyses described here have been carried out using energetic ion beam analysis. Rutherford backscattering spectrometry (RBS) has been used to measure the overall glass composition and to determine the profiles and amounts of Na released from the surface. An important part of the ion exchange process is the uptake and incorporation of hydrogen and oxygen in the glass from the solution. To facilitate this analysis, the glasses were exposed to a solution containing 18O and D and analyzed by accelerator based nuclear reaction analysis. To confirm some of the RBS depth profile data very near the surface, x-ray photoelectron spectroscopy depth profiles were collected on some samples. Although the Na concentration is decreased in the near surface region, it is not totally removed from the outer surface. In this same region, there is also a significant amount of 18O incorporated demonstrating considerable interaction between the water and the glass. Deeper into the material the amounts of D and 18O are more consistent with water or D3O+ diffusion. These results suggest that there exist an outer reaction layer and an inner ion-exchange layer in the surface region of the reacted glass. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432119
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-channeling study of the SiC/Si/SiO2/Si interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling has been used in a detailed study of 3C–SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick 〈100〉-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC–Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC–Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124143
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  • 7
    Electronic Resource
    Electronic Resource
    Direct observation of atomic disordering at the SrTiO3/Si interface due to oxygen diffusion (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of epitaxially grown single crystal SrTiO3(001) thin films on Si(100) substrates was studied as a function of temperature under vacuum and oxygen-rich environments using Rutherford backscattering spectrometry in channeling geometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy. During vacuum annealing, it was found that interfacial silica formed due to diffusion of oxygen from the film to Si. This was further accompanied by the atomic disordering of Sr, Ti, and O sublattices in the film due to reduction reactions. Although the interfacial degradation process is similar during heating in oxygen environment, no disordering of the film was observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456261
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth and properties of ferromagnetic co-doped TiO2 anatase (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3467-3469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used oxygen-plasma-assisted molecular-beam epitaxy (OPA-MBE) to grow CoxTi1−xO2 anatase on SrTiO3(001) for x=∼0.01–0.10, and have measured the structural, compositional, and magnetic properties of the resulting films. Whether epitaxial or polycrystalline, these CoxTi1−xO2 films are ferromagnetic semiconductors at and above room temperature. However, the magnetic and structural properties depend critically on the Co distribution, which varies widely with growth conditions. Co is substitutional in the anatase lattice and in the +2 formal oxidation state in ferromagnetic CoxTi1−xO2. The magnetic properties of OPA-MBE grown material are significantly better than those of analogous pulsed laser deposition-grown material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420434
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  • 9
    Electronic Resource
    Electronic Resource
    Growth, structure, and magnetic properties of γ-Fe2O3 epitaxial films on MgO (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3253-3256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal epitaxial thin films of γ-Fe2O3(001) have been grown on MgO(001) using oxygen-plasma-assisted molecular beam epitaxy. The structure and magnetic properties of these films have been characterized by a variety of techniques, including reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy and x-ray photoelectron/Auger electron diffraction (XPD/AED), vibrating sample magnetometry, and ferromagnetic resonance. Real-time RHEED reveals that the film growth occurs in a layer-by-layer fashion. The γ-Fe2O3(001) film surface exhibits a (1×1) LEED pattern. The growth of γ-Fe2O3 films at 450 °C is accompanied by significant Mg outdiffusion. AED of Mg KLL Auger emission reveals that Mg substitutionally incorporates in the γ-Fe2O3 lattice, occupying the octahedral sites. Magnetic moments are ∼2300 G and ∼4500 G for γ-Fe2O3 films grown at 250 °C and 450 °C, respectively. The high magnetic moment for the films grown at 450 °C could be attributed to the high degree of structural order of the films and Mg substitution at octahedral sites. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364355
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  • 10
    Electronic Resource
    Electronic Resource
    A scanned-angle and scanned-energy photoelectron diffraction study of (√3 x √3) R30^o Ag on Si(111)
    Amsterdam : Elsevier
    Surface Science Letters 284 (1993), S. A277 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0167-2584(93)90972-L
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