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  • 1
    Electronic Resource
    Electronic Resource
    The magnetic properties of nanocrystalline Fe-Co(Cr)–Hf–N thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5248-5250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of Co(Cr) substitution on magnetic properties of as-deposited Fe–Hf–N films. 4πMs increases with increasing Co content (3–16 at. %) and decreases with increasing Cr content. The film Fe56Co16Hf10N18(at. %) shows excellent soft magnetic properties, with 4πMs∼16.8 kG, Hc∼0.25 Oe, and effective permeability ∼4200 at 100 MHz. In Fe71Cr3Hf9N17, the permeability is about 5200 at 100 MHz, while the values of 4πMs and Hc are ∼14.6 kG and 0.5 Oe, respectively. In order to estimate the magnetic anisotropy, the angular dependency of the resonance magnetic field and linewidth were observed by ferromagnetic resonance (FMR) at 9.84 GHz. The Fe56Co16Hf10N18 film shows a single resonance peak, whereas the as-deposited Fe–Hf–N films shows weak secondary peaks. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373310
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  • 2
    Electronic Resource
    Electronic Resource
    Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3690-3692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN/GaN multiple quantum wells (MQWs) with a well thickness of 26 Å have been grown by metal–organic chemical-vapor deposition. A specially designed photoluminescence (PL) spectroscopy system, which is capable of measuring picosecond time-resolved PL up to 6.2 eV, has been employed to probe the optical properties as well as the carrier transfer and decay dynamics in these MQWs. Optical transitions at 4.039 and 5.371 eV at T=10 K, resulting from the interband recombination between the electrons and holes in the n=1 and n=2 subbands in the wells, have been observed. The band-offset parameter for the AlN/GaN heterostructure has been obtained by comparing the experimental results with the calculations. Carrier dynamics including the relaxation of the electrons and holes from the n=2 and n=1 subband in the conduction and valence bands and the decay lifetimes of the interband transitions have also been measured and analyzed. Detailed subband structures for both the conduction and valence bands in the wells were determined. The implications of our findings on the potential applications of AlN/GaN quantum wells have been discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377317
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and optical properties of InxAlyGa1−x−yN quaternary alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 61-63 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxAlyGa1−xN quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in InxAlyGa1−xN quaternary alloys was due to localized exciton recombination, while the localization effects in InxAlyGa1−xN quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that InxAlyGa1−xN quaternary alloys with lattice matched with GaN epilayers (y(approximate)4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in InxAlyGa1−x−yN quaternary alloys than that of GaN. The quantum efficiency of InxAlyGa1−xN quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that InxAlyGa1−x−yN quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331087
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  • 4
    Electronic Resource
    Electronic Resource
    Microfracture behaviour of composite resins containing irregular-shaped fillers (2002)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 29 (2002), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary  Microfracture behaviour of composite resins containing irregular-shaped fillers was understood by filler morphology observation, fracture toughness test and acoustic emission (AE) detecting method. The fracture toughness (KIC) was obtained by using single edge notched specimens. AE, the elastic wave due to the debonding of filler from the resin matrix or the fracture of filler itself, was detected during fracture toughness test. The reasons for the different fracture toughness values of composite resin, in spite of having almost the same morphology and filler content, were understood by the results of fracture surface finding and AE releasing behaviour during fracture toughness test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2002.00940.x
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of hydrogen peroxide on the light reflectance and morphology of bovine enamel (2002)
    Oxford UK : Blackwell Science Ltd
    Journal of oral rehabilitation 29 (2002), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The purpose of this study was to examine the effects of a bleaching agent (30% hydrogen peroxide) on the surface of bovine enamel using a scanning electron microscope and a UV-VIS-NIR spectrophotometer. Five non-carious bovine incisors were bleached for 0, 1, 2 and 3 days using 30% hydrogen peroxide. The light reflectance spectrum was measured using a spectrophotometer with diffuse reflectance mode. Colour values and colour differences in the teeth were evaluated from the reflectance measurements with the CIE L*a*b* colour coordinate system. Surface alterations in the bleached and unbleached teeth were studied using a scanning electron microscope. The change of reflectance in the teeth was related to the change of colour. Most reflectance change occurred within a 1-day bleaching, and this result was confirmed by a CIE L*a*b* colour coordinate system. The colour differences in the bleached teeth were significant enough to be perceived by the observer's eye. The comparison of bleached to unbleached bovine enamel revealed that the bleached surface showed non-uniform slight morphological alterations, and it developed varying degrees of surface porosity. This study indicates that the bleached bovine teeth showed apparent colour differences as well as slight morphological alterations after bleaching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2002.00856.x
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  • 6
    Electronic Resource
    Electronic Resource
    Keratitis, ichthyosis and deafness syndrome with development of multiple hair follicle tumours (2002)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 147 (2002), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary We report multiple occurrences of various kinds of tumours that originate from hair follicles in a patient diagnosed with KID (keratitis, ichthyosis, deafness) syndrome. These tumours are diagnosed as: (i) trichilemmal cysts in early lesions; (ii) proliferating trichilemmal tumours in moderate duration lesions; and (iii) malignant proliferating trichilemmal tumours in advanced lesions that are thought to progress from benign trichilemmal lesions. This three-step process raises the hypothesis of a multihit model that could account for the frequent development of tumours in KID patients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2002.04724.x
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  • 7
    Electronic Resource
    Electronic Resource
    Overexpression of HSP70 prevents ultraviolet B-induced apoptosis of a human melanoma cell line (2000)
    Springer
    Archives of dermatological research 292 (2000), S. 482-487 
    Details
    ISSN: 1432-069X
    Keywords: Keywords HSP70 ; Human melanoma cells ; Ultraviolet B ; Apoptosis ; Caspase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The heat shock response is a highly conserved reaction common to all cells and organisms. It has been reported that hyperthermic treatment can induce the expression of the heat shock protein (HSP) and can protect cells from ultraviolet (UV) B radiation. In this study, we evaluated the effects of induced HSP70 on resistance to UV radiation. G361 amelanotic human melanoma cells were irradiated with increasing doses of UVB. UVB irradiation caused apoptotic cell death in these cells. Following transfection with MFG.hsp70.puro plasmid, the expression of HSP70 was determined. Compared to control vector-transfected cells, hsp70-transfected cells showed significantly elevated levels of HSP70 and were highly resistant to UVB irradiation. In order to investigate the effects of HSP70 on the apoptotic pathway, the changes in caspase-3 and PARP were analyzed. Following UVB irradiation, activation of caspase-3 and cleavage of PARP were observed in control vector-transfected cells, and the changes in these molecules were inhibited in the hsp70-transfected cells. These results suggest that UVB-induced apoptosis of melanoma cells is accompanied by caspase-3 activation and PARP cleavage, which can be prevented by an overexpression of HSP70.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004030000173
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  • 8
    Electronic Resource
    Electronic Resource
    Vapor–Liquid Equilibria for the 1,1,1-Trifluoroethane (HFC-143a)+1,1,1,2-Tetrafluoroethane (HFC-134a) System (2000)
    Springer
    International journal of thermophysics 21 (2000), S. 871-881 
    Details
    ISSN: 1572-9567
    Keywords: binary interaction parameters ; equation of state ; HFC-134a ; HFC-143a ; vapor–liquid equilibrium
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A vapor–liquid equilibrium apparatus has been developed and used to obtain data for the binary HFC-143a+HFC-134a system. Fifty-four equilibrium data are obtained for the HFC-143a+HFC-134a system over the temperature range from 263.15 to 313.15 K at 10 K intervals. The experimental data were correlated with the Carnahan–Starling–De Santis (CSD) and Peng–Robinson (PR) equations of state. Based upon the present data, the binary interaction parameters for the CSD and PR equations of state were calculated for six isotherms for the HFC-143a+HFC-134a system. The binary interaction parameters for both equations of state were fitted by a linear equation as a function of temperature. The present data were in good agreement with the calculated results from the CSD equation of state, and the deviations were less than 1.0% with the exception of two points.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006610223852
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  • 9
    Electronic Resource
    Electronic Resource
    Noise characteristic design of CMOS source follower and voltage amplifier for active semiconductor microelectrodes for neural signal recording (2000)
    Springer
    Medical & biological engineering & computing 38 (2000), S. 469-472 
    Details
    ISSN: 1741-0444
    Keywords: Extracellular recording ; Active neural probe ; CMOS ; Source follower ; Differential amplifier ; Signal-to-device-noise ratio
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract A noise performance design method for the pre-amplifiers of an active neural probe is given. The on-chip circuitry of the active neural probe consists of CMOS devices that show high-/ low-frequency noise, so that the device noise can become dominant. Analysis of the signal-to-device-noise ratio (SDNR) for the CMOS source follower buffer and two-stage differential voltage amplifier is given. Closed-form expressions for the output noise power are derived and exploited to tailor the parameters that are controllable during circuit design. The output SDNR is calculated considering the real extracellular action potentials, the electrode-electrolyte interface and the noise spectrum of CMOS devices from typical foundries. It is shown that the output device noise power can be much higher than the output signal power if the devices at the input stage of the pre-amplifier are made as small as given fabrication technology permits. Quantitative information of the circuit parameters to achieve an SDNR higher than 5 for neural spikes with 60μV amplitude are provided for both preamplifier types.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02345018
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