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  • 11
    Electronic Resource
    Electronic Resource
    Formation of YBa2Cu3O7−y/BaTiO3 multistructures by pulsed laser deposition for high-temperature superconducting device applications (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 554-556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of YBa2Cu3O7−y(YBCO)/BaTiO3(BTO)//SrTiO3(STO) (100) and BTO/ YBCO//STO(100) bilayer structures is demonstrated for the construction of a superconductor ferroelectric field transistor. The resulting films of the bilayers have highly c-axis oriented structure. Epitaxial YBCO films formed on the BTO//STO(100) have a zero resistance temperature of 88.9 K. The surface morphology of the epitaxial BTO films on the YBCO//STO is very smooth with a mean surface roughness of 32 A(ring). Moreover, the Au/BTO/YBCO structures have been fabricated, and the dielectric constant and remanent polarization of BTO layer are obtained to be 180 and 3.5 μC/cm2 at 77 K, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115167
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  • 12
    Electronic Resource
    Electronic Resource
    Superconductivity in Srn+1CunO2n+1+δ "infinite layer'' films induced by postgrowth annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2283-2285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductivity with Tc(approximately-equal-to)25–45 K has been induced in films based on the "infinite layer'' structure though high temperature annealing in an oxygen ambient. The films had compositions Srn+1CunO2n+1+δ (n=3–9) and were previously grown by laser molecular beam epitaxy by periodic insertion of SrO defect layers into the SrCuO2 infinite layer matrix. A marked dependence on the cooling rate at the end of the postgrowth anneals indicates that preservation of a high temperature oxygen sublattice forms the key to enhancing the carrier density in these films, opposite to the situation with YBa2Cu3O7−δ . © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113193
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  • 13
    Electronic Resource
    Electronic Resource
    a-axis oriented growth of YBa2Cu3O7−y films on LaSrGaO4(100) substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1134-1136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a-axis oriented YBa2Cu3O7−y (YBCO) films on LaSrGaO4 (LSGO) (100) substrates with (100) oriented seed layer of PrBa2Cu3O7−x (PBCO) using a pulsed laser deposition technique. PBCO films on LSGO (100) deposited even at ∼800 °C exhibits the a-axis orientation. In this temperature range, PBCO films on SrTiO3 (100) substrate exhibits the c-axis orientation. The YBCO film with a-axis orientation was grown on this PBCO(100) layer at a wide range of 650–800 °C. The YBCO films on PBCO free substrates have, on the other hand, c-axis orientation normal to the surface of the LSGO (100). We found that the preferred orientations of YBCO thin films can be controlled by the presence of PBCO films on LSGO substrate. For the a-axis orientated YBCO films, the resistance perpendicular to the c axis is 1/2 of that parallel to the c axis, suggesting the preferred orientation of c axis along the surface. The zero resistance superconducting transition temperature (Tc) of the films on the LSGO (100) and PBCO (100)/LSGO (100) substrates are 88.0 and 89.0 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107692
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  • 14
    Electronic Resource
    Electronic Resource
    Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2983-2985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth mechanism of AlAs-on-Si(111) substrate was investigated. The suppression of three-dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400 °C. GaAs was grown in the two-dimensional mode on the completely relaxed AlAs on the Si(111) substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105819
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  • 15
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−y microbridges on Y2O3/yttria-stabilized zirconia/SiO2/Si(100) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2709-2711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−y (YBCO) microbridges have been fabricated on a SiO2/Si substrate using Y2O3/YSZ (yttria-stabilized zirconia) buffer layer. Using polycrystalline silicon layer overlaid on oxidized Si(100) single crystal, the bridge is microprocessed by means of electron beam lithography and dry etching. The fabricated configuration serves as a mask for depositing YSZ and Y2O3 double buffer layers. The YBCO layer is deposited on the substrate by means of laser ablation deposition. The dimension of the bridge is 1.7 μm wide and 1.3 μm long. The microbridge junctions show a critical temperature of 86 K, and microwave-induced steps are observed indicating the presence of a Josephson junction-type behavior. The IcRn product is 0.5 mV at 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108483
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  • 16
    Electronic Resource
    Electronic Resource
    Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1216-1218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of the compositional atoms was investigated at heterointerface between a GaAs epilayer and a Ge(111) substrate by secondary ion mass spectroscopy. When a thin AlAs layer is applied initially, diffusion of Ge into the GaAs epilayer was suppressed effectively. An abrupt heterointerface was successfully realized in relatively high temperature growth. The interdiffusion process at the AlAs-Ge heterointerface was clarified in high temperature growth, which was dominated by the temperature-assisted segregation of Ge atoms during the AlAs growth rather than thermal diffusion. The compositional diffusion of Al atoms into the GaAs epilayer was also observed, which was enhanced by the Ge segregation in the structure of GaAs/AlAs/Ge substrate grown at higher temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107599
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  • 17
    Electronic Resource
    Electronic Resource
    Epitaxial growth and properties of YBa2Cu3O7−y/LaSrGaO4/YBa2Cu3O7−y trilayer structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 779-781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful synthesis of insulating LaSrGaO4(LSGO) thin films and YBa2Cu3O7−y(YBCO)/LSGO heteroepitaxial multilayer structures using a pulsed laser deposition technique. SrTiO3(STO)(100) was used as a substrate. The formation of highly c-axis oriented YBCO/LSGO/YBCO trilayer structures is demonstrated. Epitaxial YBCO films on LSGO//STO and LSGO/YBCO//STO have a zero resistance temperature of 88.5 and 88.3 K, respectively. Sandwich-type YBCO/LSGO/YBCO junctions were produced by a suitable patterning technique. The observed (dI/dV)-V characteristics exhibit a clear single gap structure (width ∼26 meV) at temperatures below 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111011
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  • 18
    Electronic Resource
    Electronic Resource
    Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short-period superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threading dislocation density was remarkably reduced in highly lattice mismatched heteroepitaxies of the In0.5Ga0.5As/GaAs(001) and GaAs/GaP(001) systems. The two-dimensional growth mode was obtained even after the lattice relaxation by applying the strained short-period superlattices. The misfit dislocations aligned along the 〈110〉 direction were mainly generated at heterointerfaces. The misfit strain was relieved by the generation of the misfit dislocations in the absence of three-dimensional island growth. It was found that the generation of threading dislocations is effectively suppressed by introducing strained short-period superlattices at the initial growth stage of highly lattice mismatched heteroepitaxies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110594
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  • 19
    Electronic Resource
    Electronic Resource
    a-axis oriented epitaxial YBa2Cu3O7−y/PrBa2Cu3−xNbxO7−z multistructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the pulsed laser deposition technique, we have successfully prepared a-axis oriented PrBa2Cu3−xNbxO7−z (PBCNO)(x=0–1.5) films and YBa2Cu3O7−x (YBCO)/PBCNO heterorepitaxial multilayer structures. For the PBCNO films, the resistivity showed semiconducting behavior at all Nb substitution levels investigated. The resistivity increased with increasing Nb content, reaching a value of 104 Ω cm at 100 K for a 300-A(ring)-thick film with x=1.0. Using (100)SrTiO3 (STO) as a substrate, the following multilayer structures were successfully formed: (100)PBCNO(x=1.0)/(100)YBCO/(100)PBCO//STO, (001) YBCO/(100)PBCNO(x=1.0)/(100)PBCO//STO, and (100)YBCO/(100)PBCO/(100)PBCNO(x=1.0)/(100)PBCO//STO. The bottom and top YBCO layers in the (100)YBCO/(100)PBCO/(100)PBCNO/(100)PBCO/(100)YBCO//STO structure showed superconducting transition temperatures (zero resistance) of 82 and 83 K, respectively. The interlayer resistivity of the 200-A(ring)-thick PBCNO(x=1) interlayer was as high as 105 Ω cm at 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110809
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  • 20
    Electronic Resource
    Electronic Resource
    LaSrGaO4 substrate gives oriented crystalline YBa2Cu3O7−y films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown YBa2Cu3O7−y (YBCO) thin films of 70 nm thickness have been prepared on LaSrGaO4(001), (100), and (110) single-crystal substrates at 700 °C using ArF laser ablation deposition. The c-axis oriented thin films with smooth surface morphology are obtained on LaSrGaO4 (001) and (100) substrates. The zero resistance temperatures (Tc) of the films on the (001) and (100) substrates are 90.0 K, and 88.1 K, respectively. On the (110) substrate, (110) YBCO planes grow epitaxially. The resistance perpendicular to the c axis in this film is 1/3 of that parallel to the c axis, showing Tc⊥=85.9 K and Tc(parallel)=84.4 K, respectively. These results suggest that a LaSrGaO4 substrate having a low dielectric constant is an excellent substrate for the epitaxial growth and device application of high-Tc YBa2Cu3O7−y superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105842
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