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  • 1
    Electronic Resource
    Electronic Resource
    Production of polarized negative deuterium ion beam with dual optical pumping : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1362-1364 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To obtain a highly nuclear-spin vector polarized negative deuterium ion beam, a dual optically pumped polarized negative deuterium ion source has been developed at KEK. It is possible to select a pure nuclear-spin state with this scheme, and a negative deuterium ion beam with 100% nuclear-spin vector polarization can be produced in principle. Thus far, we have obtained about 70% of the nuclear-spin vector polarized negative deuterium ion beam. This result may open up new possibilities for the optically pumped polarized ion source. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146667
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  • 2
    Electronic Resource
    Electronic Resource
    Longitudinal impedance tuner using new material FINEMET (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2988-2992 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We designed an impedance tuner consisting of an inductive material, FINEMET, to cancel the space charge impedance in the longitudinal direction. It was installed in the KEK Proton Synchrotron (PS) main ring. We observed the frequency shift of the coherent quadrupole oscillations and inferred the shift of the incoherent synchrotron oscillation. The total reactive impedance can be estimated as the coefficient between the shift and the beam intensity. The measured impedance is reduced from −j2475Ω to −j1182Ω by the impedance tuner which consists of 12 pieces of FINEMET cores. We demonstrated that the space charge impedance is compensated by the impedance tuner. This is the first time for FINEMET to be equipped with an accelerator component. One may think that the characteristics of FINEMET deteriorate under an environment with strong radiation generated by unavoidable beam loss. We have proved that the radiation dose not affect FINEMET even with a total neutron dose of 1.83×1012(n cm−2), which is considered to be the highest dose of the main ring. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149859
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  • 3
    Electronic Resource
    Electronic Resource
    Structural modification of ion-implanted and postannealed polycrystalline diamond studied by transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1465-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363014
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  • 4
    Electronic Resource
    Electronic Resource
    Fourth-harmonic generation of picosecond glass laser pulses with cesium lithium borate crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3812-3814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fourth-harmonic generation of 1.5 ps, 1.053 μm glass laser pulses, where group velocity mismatch plays a significant role, at intensities up to 100 GW/cm2 using newly developed crystal, cesium lithium borate (CsLiB6O10). Type-I doubler and type-I quadrupler were used in the fourth harmonic generation experimental scheme. Energy conversion efficiencies of 24% and 53% have been achieved for frequency quadrupling and doubling of the fundamental glass laser pulses, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117113
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the crystal quality of chemical vapor deposited diamond films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116336
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  • 6
    Electronic Resource
    Electronic Resource
    Sensitive optical detection of the shock front and fast moving surface for shock study in condensed media in the 1 GPa stress region (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1730-1734 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Based on the light extinction of total internal reflection by triangular prisms, very sensitive detection of the shock front and fast moving free surface has been demonstrated for 1 GPa shock waves in polymers. This is the first experimental verification of the feasibility of the inclined-prism technique for the relatively low shock stress region, which was originally proposed and used by Eden and Wright for obtaining the high-explosive generated shock Hugoniot of several condensed materials. The present method has the advantage that it only requires closing the gap between the free surface of the target and the reflected surface of the prisms. The feasibility and the limitation of the method have been discussed both theoretically and experimentally. A typical streak photograph for a PMMA specimen is shown to compare with the published data. It is seen that the present method is very sensitive for shock arrival detection even in the 1 GPa shock stress region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148833
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  • 7
    Electronic Resource
    Electronic Resource
    Improved interferometer for measuring unsteady film thickness (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2685-2690 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An interferometer previously developed for measuring instantaneous film thickness of the order of 10 μm–1 mm [T. Ohyama, K. Endoh, A. Mikami, and Y. H. Mori, Rev. Sci. Instrum. 59, 2018 (1988)] has been improved with respect to both facility of handling and accuracy of thickness determination. The improved version of the interferometer uses an expanded laser beam focused aslant on the subject film. The rays reflected from the front and rear surfaces of the film form interference fringes on a screen, which are then recorded in the form of a single snapshot interferogram or as a set of serial interferograms to be geometrically analyzed. Experiments with thin glass plates as sample films verified the expected advantages of the new version over the original one. The improved version of the interferometer was also tested on a liquid film asymptotically thinning as it drained down a vertical plate. The test indicated that the accuracy and precision of the new improved version far exceed those of other transient film-thickness measuring techniques. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147095
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  • 8
    Electronic Resource
    Electronic Resource
    Radio frequency beam chopping in a surface-plasma-type negative-ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1048-1050 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A direct fast-chopped beam extracted from a surface-plasma H− ion source is proposed and a preliminary test has been examined. The converter bias voltage is modulated by rf pulses and the extracted H− beam is observed. The direct fast-chopped H− beam extracted from the ion source has a good response to the modulation of the converter bias voltage, as expected. The chopped H− beam extracted by this method has been injected into the 500 MeV booster synchrotron at KEK-PS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146754
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  • 9
    Electronic Resource
    Electronic Resource
    Intracavity frequency doubling of a continuous wave Ti:sapphire laser with over 70% conversion efficiency (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient tunable ultraviolet generation by intracavity frequency doubling of a continuous wave Ti:sapphire laser was demonstrated. Maximum output is obtained of 460 mW at 398 nm corresponding to a total infrared-to-ultraviolet conversion efficiency over 70%. High conversion efficiency was resulted from a critically phase-matched, temperature-tuned lithium triborate crystal and a novel resonator design. The observed laser damage of the crystal coatings is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113996
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  • 10
    Electronic Resource
    Electronic Resource
    Pulse modulated electron cyclotron resonance plasma for chemical vapor deposition of diamond films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1602-1604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulse operation of electron cyclotron resonance plasma was performed for the fabrication of diamond films by chemical vapor deposition. With square wave amplitude modulation of microwaves at 500 Hz in frequency, the growth rate became twice as large as one of continuous operation with the same microwave power. Time resolved measurement of the optical emission from the pulse modulated plasma was also carried out. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113865
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