Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (5)
  • 1995-1999  (5)
  • Chemistry  (4)
  • 33.50.Hv  (1)
  • Actin filaments
  • 1
    Electronic Resource
    Electronic Resource
    From torsional spectra to Hamiltonians and dynamics: effects of coupled bright and dark states of 9-(N-carbazolyl)-anthracene (1995)
    Springer
    The European physical journal 34 (1995), S. 111-118 
    Details
    ISSN: 1434-6079
    Keywords: 33.10.-n ; 33.50.Hv ; 33.80.Be
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The torsional dynamics of the 9-(N-carbazolyl)-anthracene (C9A) molecule is investigated by means of time-independent (1) and time-dependent (2) quantum-mechanical simulations in a diabatic representation. The study includes effects of surface crossing of the brightS 1 state with a dark state. (1) The intensity pattern of theS 0 →S 1 fluorescence excitation spectrum is used to fit an effective one-dimensional Hamiltonian with a single-minimum potential for the dark state together with diabatic couplings to the double well potential of the bright state. (2) Based on this Hamiltonian, first predictions for a pump-probe scheme are made. In the pump process the molecules are excited to theS 1 state followed by competing torsions in the bright state and diabatic curve crossings to the dark state, depending on the pump frequency. Assuming the probe process to be an ionization from the bright state, the interfering effects of the dark state on the dynamics in the bright state can be monitored in a directly time-dependent way on a fs-ps time scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01439385
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    144. Simulation und Optimierung von Kompostierungsanlagen (1996)
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 68 (1996), S. 1158-1158 
    Details
    ISSN: 0009-286X
    Keywords: Chemistry ; Industrial Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cite.3306809146
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    194. Das Nara-Hybridization-System (1998)
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 70 (1998), S. 1205-1206 
    Details
    ISSN: 0009-286X
    Keywords: Chemistry ; Industrial Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cite.3307009196
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Characterization and Application of the Vapor Phase Decomposition Technique for Trace Metal Analysis on Silicon Oxide Surfaces (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 511-516 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Vapor phase decomposition-droplet surface etching-graphite furnace atomic absorption spectroscopy (VPD-DSE-GFAAS) is discussed as a technique for the determination of low levels of metals in chemical oxides on silicon surfaces. The VPD-DSE-GFAAS technique was found to be statistically equivalent to results obtained by the standard surface techniques of total reflectance x-ray fluorescence spectroscopy (TXRF) and SIMS. The capability of the VPD-DSE-GFAAS technique has been extended to detection limits in the 107 to low 109 atom cm-2 range. A positive linear relationship was found for iron, calcium, zinc and aluminum deposited on a silicon wafer from an ammonium hydroxide-hydrogen peroxide-water (SC1) solution. Sodium and potassium deposition from SC1 solutions was found to be independent of solution concentrations. Deposition for these metals appeared to be primarily related to localized micron-sized nuclei deposits and not to adsorption on an atomic scale.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
  • 5
    Electronic Resource
    Electronic Resource
    Depth profile analysis: STEM-EDX vs. RBS (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 359-366 
    Details
    ISSN: 0142-2421
    Keywords: X-ray technique for structure analysis ; depth profiling ; nanocluster ; self-diffusion in metals ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Results obtained from scanning transmission electron microscopy combined with energy-dispersive X-ray imaging (EDX) and from Rutherford backscattering spectroscopy (RBS) of implanted and multilayered structures are compared in order to demonstrate the depth profiling capabilities of both analysis methods, especially at interfaces. Typical samples for dilute and concentrated systems are compared. The dilute system is represented by Ge nano-clusters in an amorphous SiO2 matrix on a Si substrate produced by ion implantation and subsequent annealing. The concentrated system of alternating Ag-Al multilayers (typical thickness ∽200 nm) is produced by evaporation on Si substrates under high vacuum conditions. A significant advantage of STEM-EDX is the two-dimensional mapping and depth profiling of light and heavier elements in heavy-Z substrates (depth scale in nanometres) without the lack of a deteriorating depth resolution at increasing depth, as happens in RBS. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...