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  • Electronic Resource  (124)
  • 1990-1994  (63)
  • 1985-1989  (60)
  • 1965-1969  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 50 (1988), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Fluorine-18-labeled ortho or para isomers of l-fluorophenylalanine were used in double-label experiments together with l-[3H]phenylalanine for amino acid incorporation into cerebral proteins of Mongolian gerbil brain. It was demonstrated by qualitative regional comparison of the 18F and 3H autoradiographic images that l-p-[18F]fluo-rophenylalanine is incorporated into proteins and exhibits a regional cerebral protein synthesis pattern. To a minor extent, l-p-fluorophenyl[3–14C]alanine and l-o-[18F]fluo-rophenylalanine are hydroxylated in vivo to form labeled tyrosine or tyrosine analogues that are incorporated into cerebral proteins as well. The advantage and validity of the application of l-p-[18F]fluorophenylalanine with positron emission tomography for noninvasive studies of cerebral protein synthesis in humans are evaluated on the basis of an experimental animal approach.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 858-864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In1−xGaxSb1−yBiy (0〈x≤0.21, 0〈y≤0.005) quaternary bulk single crystals were grown on InSb seed crystals using a rotary Bridgman method. In order to investigate the quality of these crystals, various kinds of measurements were carried out, such as optical microscope, x-ray topograph, four-crystal x-ray diffractometry, electron-probe microanalysis, energy-dispersive spectroscopy, and secondary-ion-mass spectroscopy. All grown crystals were 10 mm in diameter and more than 10 mm in length. This indicates that the rotary Bridgman method was useful to grow quaternary bulk single crystals. Owing to segregation, the compositional ratio of Bi (y) increased and that of Ga (x) decreased as crystals grew. During growth of InGaSbBi, both Ga and Bi diffused into the InSb seed and there appeared domains of InBi. For comparison, InSb1−yBiy (0〈y≤0.05) and In1−xGaxSb (0〈x≤0.16) were grown on InSb. It turned out that Bi did not diffuse into InSb without Ga, but Ga diffused without Bi. The incorporation of Ga produced the excess In and as a result InBi domains were formed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    USA/Oxford, UK : American Association for the Study of Headache/Blackwell Science Ltd
    Cephalalgia 14 (1994), S. 0 
    ISSN: 1468-2982
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Superoxide dismutase (SOD) is a radical-scavenging enzyme. We determined Cu, Zn-SOD concentrations and activities in platelets from subjects with migraine and tension-type headaches. Thirty migraine without aura (MWoA) patients, 9 migraine with aura (MWA) patients, and 53 tension-type headache patients were selected for study. Thirty healthy volunteers composed the control group. Concentrations of platelet SOD were determined using enzyme-linked immunosorbent assay techniques. The activity of platelet SOD was determined by measuring reductivity of nitroblue tetrazolium. Low concentrations of platelet SOD were found in patients with MWA and MWoA. Platelet SOD activity decreased in MWA patients but not in patients with MWoA or tension-type headaches. These findings suggest vulnerability to oxidative stress in patients with migraine. It is suggested that low platelet SOD levels may play an important role in the etiology of migraine.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 5639-5644 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 297-302 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of polarization-dependent gain-current characteristics have been carried out on (111)- and (100)-oriented GaAs/AlGaAs single-quantum-well lasers by using Hakki and Paoli's method. Polarization-dependent gain-current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higher-order subbands. Experimental results of polarization-dependent spontaneous emission are also presented. The simple selection rule and the effective-mass theories do not quantitatively account for the experimental results.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3230-3232 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The iron nitride thin films have been deposited using a facing targets sputtering (FTS) system and a conventional dc diode magnetron sputtering system, and their crystallographic characteristics and magnetic properties have been investigated. The total gas pressure (PN2+PAr) was set at 2 mTorr. The films deposited by the FTS system without heating the substrate at PN2 below 0.3 mTorr possessed α-Fe-like structure with an increased lattice constant. At PN2 of around 0.5 mTorr, a two-phase mixture of α-Fe and Fe2–3N was formed in the films prepared in the FTS system, while ζ-Fe2N phase was formed in the films prepared by dc magnetron sputtering. The films prepared by FTS at PN2 of 0.1 mTorr possessed α-Fe and γ'-Fe4N structures when a substrate temperature (Ts) was in the range from 80 to 300 °C. The films deposited at Ts of about 150 °C possessed a saturation magnetization (Ms) of about 1700 emu/cm3, which is larger than that of pure iron films and coercivity (Hc) of about 1.5 Oe.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2466-2474 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of low-energy ion accelerator has been developed. It includes an eight-storied Disktron generator, newly developed accelerating tubes which hold up to 4 MV/m, both single and tandem acceleration capability, and a compound negative ion source. The Disktron generates 3.2 MV with a dummy load and 2.2 MV with ion beams, and has a voltage stability better than 10−3 at around 1 MV with a corona feedback stabilizer or a generating voltmeter feedback stabilizer only. The highly stabilized voltage of the Disktron has particularly been allowed to form an ion microbeam of about 1-μm diameter.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 550-560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation model of amorphous silicon solar cells using a Scharfetter and Gummel solution of Poisson's equation and Taylor and Simmons occupancy statistics for the dangling bond gap states (D states), has been developed. With a suitable choice of parameters, the numerical results for solar cell collection efficiency and dark and illuminated I-V characteristics agree well with experimental values. The model has been used specifically to study the influence of interface states at the TCO-p (transparent conductive oxide), p-i, i-n, and n-metal interfaces and to explain the beneficial role of a graded-band-gap layer at the p-i interface.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3192-3201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ method based on interfacial electrical impendance measurements is described for following the time-dependent intrusion of water in an adhesive interface that is exposed to a humid environment. Water ingress is measured by its effect on bulk and interfacial conductivity, while regions of liquid water are identified by the presence of aqueous double-layer capacitances. Preliminary measurements are made using aluminum triple-track electrodes to study the environmental stability of adhesion between oxidized silicon (SiO2, 4% P) substrates and three coating materials (RTV silicone, amine-cured epoxy, and mercaptan-cured novolac epoxy) at 80 °C and 94% relative humidity. Moisture-induced changes in conductivity of all coatings are measured, and the presence of condensed water in the mercaptan-cured epoxy interface is clearly identified. Based on static potential field calculations, a modified experimental procedure is outlined that can be used to quantitatively isolate interfacial conduction processes from ac conduction in bulk substrate and coating phases. By indicating the state and quantity of interfacial moisture, capacitance and conductance measurements will allow interface displacement processes to be monitored.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1729-1732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy-band structure of (AlAs) (GaAs) short-period superlattices (SLs) has been investigated by using photoluminescence and photoluminescence excitation spectroscopy. In the indirect transition region, both direct and indirect transitions are simultaneously observed and the band structure is elucidated. Indirect-direct crossover occurs in the region of 15–18 A(ring) GaAs thickness for SLs with 10-A(ring) AlAs thickness.
    Type of Medium: Electronic Resource
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