ZIB

1

Digitale Medien

Determination of Trace Amounts of Carbon Monoxide in Gaseous Hydrocarbons (1957)

Melson, K. H. ; Grimes, M. D. ; Smith, D. E. ; [weitere]

s.l. : American Chemical Society

Analytical chemistry 29 (1957), S. 180-183

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ISSN: 1520-6882

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/ac60122a003

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2

Digitale Medien

Determination of Low Concentrations of Radioactive Cesium in Water (1957)

Kahn, Bernd ; Smith, D. K. ; Straub, C. P.

s.l. : American Chemical Society

Analytical chemistry 29 (1957), S. 1210-1213

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ISSN: 1520-6882

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/ac60128a030

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3

Digitale Medien

Factors Affecting the Electromotive Force of Binary Solid Alloys (1916)

Smith, D. F. ; Gordon, N. T.

s.l. : American Chemical Society

The @journal of physical chemistry 〈Washington, DC〉 20 (1916), S. 228-242

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Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie , Physik

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/j150165a005

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4

Digitale Medien

The Occlusion of Hydrogen by the Metallic Elements and its Relation to Magnetic Properties (1919)

Smith, D. P.

s.l. : American Chemical Society

The @journal of physical chemistry 〈Washington, DC〉 23 (1919), S. 186-202

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Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie , Physik

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/j150192a003

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5

Digitale Medien

Retrieval System for Quality Control Drug Data (1967)

Mefford, D. A. ; Smith, D. R. ; Beauchamp, R. O. ; [weitere]

s.l. : American Chemical Society

Journal of chemical documentation 7 (1967), S. 240-244

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ISSN: 1520-5142

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/c160027a011

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6

Digitale Medien

Structure-activity studies of a novel bicyclic oxytocin antagonist (1992)

Smith, D. David ; Slaninova, Jirina ; Hruby, Victor J.

s.l. : American Chemical Society

Journal of medicinal chemistry 35 (1992), S. 1558-1563

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ISSN: 1520-4804

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/jm00087a009

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7

Digitale Medien

Deposited silicon nitride with low electron trapping rates (1993)

Park, Y. C. ; Jackson, W. B. ; Smith, D. L. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 381-386

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.354121

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8

Digitale Medien

Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures (1993)

Emeleus, C. J. ; Whall, T. E. ; Smith, D. W. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 3852-3856

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2–5×1011 cm−2 and a typical mobility at 5 K of 2000 cm2 V−1 s−1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.352895

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9

Digitale Medien

The chemisorption and reaction of BCl3 with Si(111) (1992)

Lapiano-Smith, D. A. ; McFeely, F. R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 4907-4911

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The chemical mechanisms involved in the decomposition of boron trichloride and the concomitant incorporation of elemental boron into Si(111) were elucidated. The reaction between BCl3 and Si(111) is quit complex due to the presence of Si, B, and Cl in a number of chemically distinct environments simultaneously. Annealing the sample to 570 °C effectively desorbs all molecularly adsorbed BCl3. Additional anneals to 710 and 870 °C largely reduce the BCl2 and BCl3 moeities to form the subsurface-boron reconstructed surface.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.352057

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10

Digitale Medien

A mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2Cl2 (1992)

Lapiano-Smith, D. A. ; McFeely, F. R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 4544-4546

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The interaction between B2H6 and SiO2 was investigated by soft x-ray photoemission. Thermally activated, autocatalytic dissociative chemisorption of B2H6 on SiO2 to form elemental films was discovered at temperatures exceeding 550 °C. These surfaces are shown to be quite reactive towards SiH2Cl2. This process is thus a mechanism whereby the selectivity of chemical vapor deposition exhibited by SiH2Cl2 towards SiO2 can be rapidly degraded.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.351384

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