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  • Electronic Resource  (4)
  • 1990-1994  (4)
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  • Electronic Resource  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Deep center scattering potential in InGaP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7410-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobility limited by the scattering of a phosphorous vacancy-induced deep center in In0.5Ga0.5P alloy grown by liquid-phase epitaxy on a (100) GaAs substrate has been investigated by means of Hall mobility and deep-level transient spectroscopy measurements. Two kinds of scattering potentials, Gaussian well type and square-well type, were considered. It was found that the scattering potential can be better described by the Gaussian-type potential than the square-well one. The mobility limited by deep center scattering has been fully calculated and analyzed. As a result, the mobility is characterized by a temperature dependence of T−1/2 in the temperature range from 77 to 400 K. The point defect scattering severely reduces the total mobility as its concentration increases. In addition, the scattering case when there is an electron trapped in the Gaussian potential well was also quantitatively investigated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358524
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 771-774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole–Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission rate from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353336
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of the sub-band energy in the V-shaped potential well of δ -doped GaAs by deep level transient spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2425-2427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112695
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the conduction-band offset of a single AlGaAs barrier layer using deep level transient spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2813-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset ΔEc was determined to be 0.260 eV, corresponding to 63% of ΔEg. A calculation was also carried out based on this tunneling model by using the experimental value of ΔEc=E2−E1=0.260 eV, and good agreement between the experimental and calculated curves is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109218
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    Paper (German National Licenses)
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